Diodes Incorporated ZXTN4004KTC
- Part Number:
- ZXTN4004KTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462728-ZXTN4004KTC
- Description:
- TRANS NPN 150V 1A TO252
- ECAD Model:
-
- Datasheet:
- ZXTN4004KTC
Diodes Incorporated ZXTN4004KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN4004KTC.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight1.799996g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation3.8W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN4004
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3.8W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)150V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 250mV
- Current - Collector Cutoff (Max)50nA
- Collector Emitter Breakdown Voltage150V
- Max Breakdown Voltage150V
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)7V
- hFE Min100
- Continuous Collector Current1A
- Height6.2mm
- Length6.7mm
- Width2.39mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN4004KTC Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 250mV DC current gain.For high efficiency, the continuous collector voltage must be kept at 1A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
ZXTN4004KTC Features
the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V
ZXTN4004KTC Applications
There are a lot of Diodes Incorporated
ZXTN4004KTC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 250mV DC current gain.For high efficiency, the continuous collector voltage must be kept at 1A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
ZXTN4004KTC Features
the DC current gain for this device is 100 @ 150mA 250mV
the emitter base voltage is kept at 7V
ZXTN4004KTC Applications
There are a lot of Diodes Incorporated
ZXTN4004KTC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN4004KTC More Descriptions
ZXTN4004 Series NPN 3.8 W 150 V 1 A Surface Mount Transistor - TO-252-3
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Trans, NPN, Transistor, GP,150V 1A TO252 | Diodes Inc ZXTN4004KTC
Trans GP BJT NPN 150V 1A 3800mW 3-Pin(2 Tab) TO-252 T/R
TRANS, NPN, 150V, 1A, 3.8W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: -; Power Dissipation Pd: 3.8W; DC Collector Current: 1A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Trans, NPN, Transistor, GP,150V 1A TO252 | Diodes Inc ZXTN4004KTC
Trans GP BJT NPN 150V 1A 3800mW 3-Pin(2 Tab) TO-252 T/R
TRANS, NPN, 150V, 1A, 3.8W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: -; Power Dissipation Pd: 3.8W; DC Collector Current: 1A; DC Current Gain hFE: 60hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to ZXTN4004KTC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCTerminal PositionCurrent RatingFrequencyPin CountGain Bandwidth ProductVce Saturation (Max) @ Ib, IcTransition FrequencyCollector Emitter Saturation VoltageView Compare
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ZXTN4004KTC12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6331.799996gSILICON-55°C~150°C TJTape & Reel (TR)2011e3noActive1 (Unlimited)2EAR99Matte Tin (Sn)HIGH RELIABILITYOther Transistors3.8WGULL WING26040ZXTN4004R-PSSO-G21Single3.8WCOLLECTORAMPLIFIERNPNNPN150V1A100 @ 150mA 250mV50nA150V150V150V7V1001A6.2mm6.7mm2.39mmNo SVHCNoROHS3 CompliantLead Free---------- -
15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)--2.1WFLAT26040ZXTN2005-1Single2.1WCOLLECTORSWITCHINGNPNNPN25V5.5A300 @ 1A 1V20nA ICBO25V25V60V7V2005.5A1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free25VDUAL5.5A150MHz4150MHz200mV @ 150mA, 6.5A150MHz200mV
-
30 WeeksThrough HoleThrough HoleE-Line-33---55°C~150°C TJBulk2006e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--1W---ZXTN2010A--Single----NPN60V4.5A100 @ 2A 1V50nA ICBO60V-150V7V-4.5A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free60V-4.5A--130MHz210mV @ 200mA, 5A--
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed--350mWGULL WING26040ZXTN25012E-1Single350mW--NPNNPN12V2A500 @ 10mA 2V50nA ICBO12V12V20V7V--1.02mm3.04mm1.4mm-NoROHS3 CompliantLead Free-DUAL-260MHz3260MHz300mV @ 100mA, 5A260MHz300mV
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