Diodes Incorporated ZXTBM322TA

ZXTBM322TA Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 210mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 125mA, 4.5A.With the emitter base voltage set at 7.5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.

ZXTBM322TA Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 140MHz


ZXTBM322TA Applications
There are a lot of Diodes Incorporated
ZXTBM322TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting