Diodes Incorporated ZXMP6A17DN8TA
- Part Number:
- ZXMP6A17DN8TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473558-ZXMP6A17DN8TA
- Description:
- MOSFET 2P-CH 60V 2.7A 8-SOIC
- Datasheet:
- ZXMP6A17DN8TA
Diodes Incorporated ZXMP6A17DN8TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP6A17DN8TA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance125mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation2.15W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3.1A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.15W
- Case ConnectionDRAIN
- Turn On Delay Time2.6 ns
- Power - Max1.81W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs125m Ω @ 2.3A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA (Min)
- Input Capacitance (Ciss) (Max) @ Vds637pF @ 30V
- Current - Continuous Drain (Id) @ 25°C2.7A
- Gate Charge (Qg) (Max) @ Vgs17.7nC @ 10V
- Rise Time3.4ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)11.3 ns
- Turn-Off Delay Time26.2 ns
- Continuous Drain Current (ID)3.2A
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)11.1A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
ZXMP6A17DN8TA Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXMP6A17DN8TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXMP6A17DN8TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXMP6A17DN8TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXMP6A17DN8TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
ZXMP6A17DN8TA More Descriptions
Transistor MOSFET Array Dual P-CH 60V 3.42A 8-Pin SOIC T/R
Dual P-Channel 60 V 0.125 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
MOSFET Dual P-Channel 20V 3.2A SOIC8 | Diodes Inc ZXMP6A17DN8TA
MOSFET, PP CH, 60V, 3.2A, SO8; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -3.2A; Drain Source Voltage Vds, P Channel: -60V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.125ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Dual P-Channel 60 V 0.125 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
MOSFET Dual P-Channel 20V 3.2A SOIC8 | Diodes Inc ZXMP6A17DN8TA
MOSFET, PP CH, 60V, 3.2A, SO8; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -3.2A; Drain Source Voltage Vds, P Channel: -60V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.125ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
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