UMG9NTR

Rohm Semiconductor UMG9NTR

Part Number:
UMG9NTR
Manufacturer:
Rohm Semiconductor
Ventron No:
2461417-UMG9NTR
Description:
TRANS 2NPN PREBIAS 0.15W UMT5
ECAD Model:
Datasheet:
UMG9NTR

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Specifications
Rohm Semiconductor UMG9NTR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMG9NTR.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    5-TSSOP, SC-70-5, SOT-353
  • Number of Pins
    5
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    150mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    50mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MG9
  • Pin Count
    5
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • hFE Min
    30
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    50mA
  • Resistor - Emitter Base (R2)
    10k Ω
  • VCEsat-Max
    0.3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
UMG9NTR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet UMG9NTR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMG9NTR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMG9NTR More Descriptions
TRANS 2NPN PREBIAS 0.15W UMT5 / Trans Digital BJT NPN 50V 100mA 150mW 5-Pin UMT T/R
UMG9N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88A
30@5mA,5V 2 NPN - Pre-Biased 150mW 100mA 50V 500nA SOT-353-5 Digital Transistors ROHS
Transistor DUAL UM5 NPN/NPN; Digital Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;
Transistor Dual Um5 Npn/Npn, Sot-353; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; No. Of Pins:5 Pin Rohs Compliant: Yes |Rohm UMG9NTR
TRANSISTOR DUAL UM5 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-353; No. of Pins: 5 Pin; Product Range: UMG9N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-353; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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