ON Semiconductor TIP31
- Part Number:
- TIP31
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466062-TIP31
- Description:
- TRANS NPN 40V 3A TO220AB
- Datasheet:
- TIP31/A/B/C TO220B03 Pkg Drawing
ON Semiconductor TIP31 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP31.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max2W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)3A
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
TIP31 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 40V maximal voltage - Collector Emitter Breakdown.
TIP31 Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of TO-220AB
TIP31 Applications
There are a lot of Rochester Electronics, LLC
TIP31 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220AB contains the product.The device has a 40V maximal voltage - Collector Emitter Breakdown.
TIP31 Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of TO-220AB
TIP31 Applications
There are a lot of Rochester Electronics, LLC
TIP31 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31 More Descriptions
Tube Through Hole NPN Single Bipolar (BJT) Transistor 10 @ 3A 4V 3A 2W 3MHz
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Compliant Through Hole 25 NPN 3 MHz Lead Free Bulk TO-220
Darlington Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:40W; DC Current Gain Min (hfe):10; Package/Case:TO-220; C-E Breakdown Voltage:100V; DC Collector Current:3A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Compliant Through Hole 25 NPN 3 MHz Lead Free Bulk TO-220
Darlington Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:40W; DC Current Gain Min (hfe):10; Package/Case:TO-220; C-E Breakdown Voltage:100V; DC Collector Current:3A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
The three parts on the right have similar specifications to TIP31.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP31Through HoleTO-220-3TO-220AB-65°C~150°C TJTubeObsolete1 (Unlimited)2WNPN10 @ 3A 4V300μA1.2V @ 375mA, 3A40V3A3MHzROHS3 Compliant--------------------------------------------------------------
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Through HoleTO-220-3-150°C TJTubeObsolete1 (Unlimited)2WNPN10 @ 3A 4V300μA1.2V @ 375mA, 3A60V3A3MHzROHS3 CompliantNOSILICONe3yes3MATTE TINSINGLENOT APPLICABLENOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLESWITCHINGNPNTO-220AB3MHz-------------------------------------------
-
Through HoleTO-220-3-150°C TJTubeObsolete1 (Unlimited)-NPN10 @ 3A 4V300μA1.2V @ 375mA, 3A---RoHS Compliant-SILICONe3yes3Tin (Sn)------1-SWITCHINGNPNTO-220AB3MHzLAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough Hole31.214g2013EAR99Other Transistors100V2W3A3MHzTIP31Single2W3MHz100V3A100V100V100V5V106.35mm6.35mm6.35mmNo SVHCNoLead Free--------------
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---------------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A
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