Toshiba Semiconductor and Storage TH58BVG2S3HTA00

Name: TH58BVG2S3HTA00
Brand: Toshiba Semiconductor and Storage
SKU: 3228487-TH58BVG2S3HTA00
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: TH58BVG2S3HTA00

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 3228487-TH58BVG2S3HTA00

Description:: IC EEPROM 4GBIT 25NS 48TSOP

ECAD Model:

Datasheet:: SLC NAND & BENAND

Specifications

Toshiba Semiconductor and Storage TH58BVG2S3HTA00 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TH58BVG2S3HTA00.

Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Supplier Device Package
48-TSOP I
Operating Temperature
0°C~70°C TA
Packaging
Tray
Series
Benand™
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
FLASH - NAND (SLC)
Voltage - Supply
2.7V~3.6V
Memory Size
4Gb 512M x 8
Memory Type
Non-Volatile
Access Time
25ns
Memory Format
FLASH
Memory Interface
Parallel
Write Cycle Time - Word, Page
25ns
RoHS Status
RoHS Compliant

Description

TH58BVG2S3HTA00 Overview
The Benand™ series is a high-quality, non-volatile memory product designed for surface mount installation. With an operating temperature range of 0°C to 70°C, this memory is suitable for a wide range of applications. It has a moisture sensitivity level of 3, allowing it to withstand 168 hours of exposure to moisture. The voltage supply for this product ranges from 2.7V to 3.6V, providing reliable and stable power for optimal performance. With a memory size of 4Gb 512M x 8, this product offers ample storage capacity. It has an access time of 25ns and a write cycle time of 25ns for word and page operations. Additionally, this product is RoHS compliant, ensuring its environmental sustainability.

TH58BVG2S3HTA00 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)

TH58BVG2S3HTA00 Applications
There are a lot of Kioxia America, Inc.
TH58BVG2S3HTA00 Memory applications.

telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)

TH58BVG2S3HTA00 More Descriptions

SLC NAND Flash Parallel 3.3V 4Gbit 512M X 8bit 25ns 48-Pin TSOP-I Tray
Active 2014 Parallel EEPROM NAND (Memory Format) Memory 70C
IC FLASH 4GBIT PARALLEL 48TSOP I
NAND Flash 4 Gbit CMOS NAND EEPROM

Product Comparison

The three parts on the right have similar specifications to TH58BVG2S3HTA00.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Access Time

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Surface Mount

Number of Terminations

Terminal Position

Terminal Form

Number of Functions

Supply Voltage

Terminal Pitch

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Parallel/Serial

Programming Voltage

Length

Height Seated (Max)

Width

View Compare
TH58BVG2S3HTA00

Toshiba Semiconductor and Storage

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48-TSOP I

0°C~70°C TA

Tray

Benand™

Active

3 (168 Hours)

FLASH - NAND (SLC)

2.7V~3.6V

4Gb 512M x 8

Non-Volatile

25ns

FLASH

Parallel

25ns

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
TH58BVG3S0HTAI0

Toshiba Semiconductor and Storage

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

-

-40°C~85°C TA

Tray

Benand™

Active

3 (168 Hours)

FLASH - NAND (SLC)

2.7V~3.6V

8Gb 1G x 8

Non-Volatile

-

FLASH

-

25ns

RoHS Compliant

YES

48

DUAL

GULL WING

1

3.3V

0.5mm

R-PDSO-G48

3.6V

2.7V

ASYNCHRONOUS

1GX8

8

8589934592 bit

PARALLEL

3.3V

18.4mm

1.2mm

12mm

TH58BVG2S3HTA00 vs TH58BVG3S0HTAI0
TH58BYG3S0HBAI4

Toshiba Semiconductor and Storage

Surface Mount

63-VFBGA

-

-40°C~85°C TA

Tray

Benand™

Active

3 (168 Hours)

FLASH - NAND (SLC)

1.7V~1.95V

8Gb 1G x 8

Non-Volatile

-

FLASH

Parallel

25ns

RoHS Compliant

YES

63

BOTTOM

-

1

1.8V

0.8mm

R-PBGA-B63

1.95V

1.7V

ASYNCHRONOUS

1GX8

8

8589934592 bit

-

1.8V

11mm

1mm

9mm

TH58BVG2S3HTA00 vs TH58BYG3S0HBAI4
TH58NVG3S0HBAI6

Toshiba Semiconductor and Storage

Surface Mount

67-VFBGA

-

-40°C~85°C TA

Tray

-

Active

3 (168 Hours)

FLASH - NAND (SLC)

2.7V~3.6V

8Gb 1G x 8

Non-Volatile

-

FLASH

Parallel

25ns

RoHS Compliant

YES

67

BOTTOM

-

1

3.3V

0.8mm

R-PBGA-B67

3.6V

2.7V

ASYNCHRONOUS

1GX8

8

8589934592 bit

-

3V

8mm

1mm

6.5mm

TH58BVG2S3HTA00 vs TH58NVG3S0HBAI6