Toshiba Semiconductor and Storage TC58NVG1S3HTAI0
- Part Number:
- TC58NVG1S3HTAI0
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3229192-TC58NVG1S3HTAI0
- Description:
- IC EEPROM 2GBIT 25NS 48TSOP
- Datasheet:
- TC58NVG1S3HTAI0
Toshiba Semiconductor and Storage TC58NVG1S3HTAI0 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TC58NVG1S3HTAI0.
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 256M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Memory Density2147483648 bit
- Programming Voltage3.3V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusRoHS Compliant
TC58NVG1S3HTAI0 Overview
Introducing our latest product, the 48-TFSOP (0.724, 18.40mm Width) package/case. This high-quality package is designed to withstand extreme operating temperatures ranging from -40°C to 85°C TA, making it suitable for a wide range of applications. With a single function and a supply voltage of 3.3V, this product offers reliable and efficient performance. It is compliant with JESD-30 Code R-PDSO-G48 and has a maximum supply voltage of 3.6V. The memory type is non-volatile, ensuring data retention even in the event of power loss. Operating in asynchronous mode, this product offers flexibility and convenience. The memory format is FLASH and the width is 12mm, making it compact and space-saving. Trust our 48-TFSOP package to meet your needs for a durable and efficient product.
TC58NVG1S3HTAI0 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
TC58NVG1S3HTAI0 Applications
There are a lot of Kioxia America, Inc.
TC58NVG1S3HTAI0 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Introducing our latest product, the 48-TFSOP (0.724, 18.40mm Width) package/case. This high-quality package is designed to withstand extreme operating temperatures ranging from -40°C to 85°C TA, making it suitable for a wide range of applications. With a single function and a supply voltage of 3.3V, this product offers reliable and efficient performance. It is compliant with JESD-30 Code R-PDSO-G48 and has a maximum supply voltage of 3.6V. The memory type is non-volatile, ensuring data retention even in the event of power loss. Operating in asynchronous mode, this product offers flexibility and convenience. The memory format is FLASH and the width is 12mm, making it compact and space-saving. Trust our 48-TFSOP package to meet your needs for a durable and efficient product.
TC58NVG1S3HTAI0 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
TC58NVG1S3HTAI0 Applications
There are a lot of Kioxia America, Inc.
TC58NVG1S3HTAI0 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
TC58NVG1S3HTAI0 More Descriptions
Active 1997 Parallel EEPROM NAND SLC NAND (Memory Format) Memory 85C 3.6V 2Gb 25mus
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I
2.7V~3.6V 2Gbit TSOP-48 NAND FLASH ROHS
2Gbit, generation: 24nm, VCC=2.7 to 3.6V
FLASH TC58NVG1S3HTAI0 2GB TSOP-48
IC FLASH 2GBIT PARALLEL 48TSOP I
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 48-Pin TSOP-I
2.7V~3.6V 2Gbit TSOP-48 NAND FLASH ROHS
2Gbit, generation: 24nm, VCC=2.7 to 3.6V
FLASH TC58NVG1S3HTAI0 2GB TSOP-48
IC FLASH 2GBIT PARALLEL 48TSOP I
EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
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