Toshiba Semiconductor and Storage TC58CVG2S0HRAIG
- Part Number:
- TC58CVG2S0HRAIG
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3229686-TC58CVG2S0HRAIG
- Description:
- 4GB SERIAL NAND 24NM WSON8 3.3V
- Datasheet:
- TC58CVG2S0HRAIG
Toshiba Semiconductor and Storage TC58CVG2S0HRAIG technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TC58CVG2S0HRAIG.
- Mounting TypeSurface Mount
- Package / Case8-WDFN Exposed Pad
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- Additional FeatureIT ALSO ORGANIZED AS 4G X 1
- TechnologyFLASH - NAND (SLC)
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-N8
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size4Gb 512M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Clock Frequency104MHz
- Access Time280μs
- Memory FormatFLASH
- Memory InterfaceSPI - Quad I/O
- Organization1GX4
- Memory Width4
- Memory Density4294967296 bit
- Parallel/SerialSERIAL
- Programming Voltage2.7V
- Alternate Memory Width2
- RoHS StatusRoHS Compliant
TC58CVG2S0HRAIG Overview
The package or case of this electronic component is 8-WDFN Exposed Pad, with a dual terminal position. The time at peak reflow temperature is not specified, and the JESD-30 code is R-PDSO-N8. The clock frequency for this component is 104MHz. It has a memory format of FLASH with a width of 4 and a density of 4294967296 bits. An alternate memory width of 2 is also available. This component is RoHS compliant, meaning it adheres to the Restriction of Hazardous Substances directive. With its compact size, high clock frequency, and RoHS compliance, this electronic component is a versatile and environmentally-friendly option for various applications.
TC58CVG2S0HRAIG Features
Package / Case: 8-WDFN Exposed Pad
Additional Feature:IT ALSO ORGANIZED AS 4G X 1
TC58CVG2S0HRAIG Applications
There are a lot of Kioxia America, Inc.
TC58CVG2S0HRAIG Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The package or case of this electronic component is 8-WDFN Exposed Pad, with a dual terminal position. The time at peak reflow temperature is not specified, and the JESD-30 code is R-PDSO-N8. The clock frequency for this component is 104MHz. It has a memory format of FLASH with a width of 4 and a density of 4294967296 bits. An alternate memory width of 2 is also available. This component is RoHS compliant, meaning it adheres to the Restriction of Hazardous Substances directive. With its compact size, high clock frequency, and RoHS compliance, this electronic component is a versatile and environmentally-friendly option for various applications.
TC58CVG2S0HRAIG Features
Package / Case: 8-WDFN Exposed Pad
Additional Feature:IT ALSO ORGANIZED AS 4G X 1
TC58CVG2S0HRAIG Applications
There are a lot of Kioxia America, Inc.
TC58CVG2S0HRAIG Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
TC58CVG2S0HRAIG More Descriptions
SLC NAND Flash Serial-SPI 3.3V 4Gbit 4G/2G/1G X 1bit/2bit/4bit 8ns 8-Pin WSON
Active SERIAL NO LEAD FLASH (Memory Format) Memory 85C 2.7V 4294967296bit
Cap Ceramic 4.7uF 50V X5R 10% SMD 0805 85C Embossed T/R
NAND Flash 4Gb 3.3V SLC NAND Flash Serial
IC FLASH 4GBIT SPI 104MHZ 8WSON
Active SERIAL NO LEAD FLASH (Memory Format) Memory 85C 2.7V 4294967296bit
Cap Ceramic 4.7uF 50V X5R 10% SMD 0805 85C Embossed T/R
NAND Flash 4Gb 3.3V SLC NAND Flash Serial
IC FLASH 4GBIT SPI 104MHZ 8WSON
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