TC58BVG0S3HBAI4

Toshiba Semiconductor and Storage TC58BVG0S3HBAI4

Part Number:
TC58BVG0S3HBAI4
Manufacturer:
Toshiba Semiconductor and Storage
Ventron No:
3229315-TC58BVG0S3HBAI4
Description:
IC EEPROM 1GBIT 25NS 63FBGA
ECAD Model:
Datasheet:
TC58BVG0S3HBAI4

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Specifications
Toshiba Semiconductor and Storage TC58BVG0S3HBAI4 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TC58BVG0S3HBAI4.
  • Mounting Type
    Surface Mount
  • Package / Case
    63-VFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Series
    Benand™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    63
  • Technology
    FLASH - NAND (SLC)
  • Voltage - Supply
    2.7V~3.6V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    3.3V
  • Terminal Pitch
    0.8mm
  • JESD-30 Code
    R-PBGA-B63
  • Supply Voltage-Max (Vsup)
    3.6V
  • Supply Voltage-Min (Vsup)
    2.7V
  • Memory Size
    1Gb 128M x 8
  • Memory Type
    Non-Volatile
  • Operating Mode
    ASYNCHRONOUS
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    128MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    25ns
  • Memory Density
    1073741824 bit
  • Programming Voltage
    3.3V
  • Height Seated (Max)
    1mm
  • Length
    11mm
  • Width
    9mm
  • RoHS Status
    RoHS Compliant
Description
TC58BVG0S3HBAI4 Overview
The Benand™ series offers a high-quality and reliable 63-VFBGA package, with a moisture sensitivity level of 3 (168 hours) to ensure optimal performance. This package is supplied in trays for efficient handling and storage. With a JESD-30 code of R-PBGA-B63, this product features 63 terminations and a supply voltage of 3.3V. The maximum seated height is 1mm, with a length of 11mm and width of 9mm, providing a compact and space-saving solution for various applications. Trust in the Benand™ series for superior performance and durability in your electronic designs.

TC58BVG0S3HBAI4 Features
Package / Case: 63-VFBGA


TC58BVG0S3HBAI4 Applications
There are a lot of Kioxia America, Inc.
TC58BVG0S3HBAI4 Memory applications.


multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
TC58BVG0S3HBAI4 More Descriptions
1Gbit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
Active BALL 2012 Parallel (Memory Format) Memory 85C 3.6V 8b 9mm
BENAND-Flash 128Mx8 3.3V BGA63 RoHSconf
SLC NAND Flash 3.3V 1G-bit 63-Pin BGA
IC FLASH 1GBIT PARALLEL 63TFBGA
French Electronic Distributor since 1988
EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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