STMicroelectronics STSA1805
- Part Number:
- STSA1805
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3069204-STSA1805
- Description:
- TRANS NPN 60V 5A TO-92
- Datasheet:
- STSA1805
STMicroelectronics STSA1805 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STSA1805.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation1.1W
- Terminal PositionBOTTOM
- Current Rating3A
- Frequency150MHz
- Base Part NumberSTSA1805
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 5A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage200mV
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STSA1805 Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 200mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 5A volts.
STSA1805 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 150MHz
STSA1805 Applications
There are a lot of STMicroelectronics
STSA1805 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 200mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 5A volts.
STSA1805 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 150MHz
STSA1805 Applications
There are a lot of STMicroelectronics
STSA1805 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
STSA1805 More Descriptions
Transistor GP BJT NPN 60V 5A 3-Pin TO-92 Bag
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 60V 5A TO92 RoHSconf
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:5A; Voltage, Vce Sat Max:50mV; Power Dissipation:1.1W; Min Hfe:20; ft, Typ:150MHz; Case;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1.1W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 50mV; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 5A; Current Ic hFE: 10A; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 20; Power Dissipation Ptot Max: 1.1W; Voltage Vcbo: 150V
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 60V 5A TO92 RoHSconf
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:5A; Voltage, Vce Sat Max:50mV; Power Dissipation:1.1W; Min Hfe:20; ft, Typ:150MHz; Case;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1.1W; DC Collector Current: 5A; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 50mV; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 5A; Current Ic hFE: 10A; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 20; Power Dissipation Ptot Max: 1.1W; Voltage Vcbo: 150V
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