STS9NH3LL

STMicroelectronics STS9NH3LL

Part Number:
STS9NH3LL
Manufacturer:
STMicroelectronics
Ventron No:
2481541-STS9NH3LL
Description:
MOSFET N-CH 30V 9A 8-SOIC
ECAD Model:
Datasheet:
STS9NH3LL

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Specifications
STMicroelectronics STS9NH3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS9NH3LL.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ III
  • JESD-609 Code
    e4
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STS9NH
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    857pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 4.5V
  • Rise Time
    14.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±16V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    9A
  • Gate to Source Voltage (Vgs)
    18V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain-source On Resistance-Max
    0.025Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    36A
  • Avalanche Energy Rating (Eas)
    100 mJ
  • RoHS Status
    ROHS3 Compliant
Description
STS9NH3LL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 857pF @ 25V.This device has a continuous drain current (ID) of [9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 9A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.A maximum pulsed drain current of 36A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 18V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

STS9NH3LL Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 36A.


STS9NH3LL Applications
There are a lot of STMicroelectronics
STS9NH3LL applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STS9NH3LL More Descriptions
Power MOSFET Transistors NCh 30V 0.018 Ohm 9A
Trans MOSFET N-CH 30V 9A 8-Pin SO N T/R
MOSFET N-CH 30V 9A 2.5W 8-SOIC
N-Channel 30V - 0.018Ohm - 9A - SO-8
Power Field-Effect Transistor, 9A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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