STMicroelectronics STS9NH3LL
- Part Number:
- STS9NH3LL
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2481541-STS9NH3LL
- Description:
- MOSFET N-CH 30V 9A 8-SOIC
- Datasheet:
- STS9NH3LL
STMicroelectronics STS9NH3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS9NH3LL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ III
- JESD-609 Codee4
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTS9NH
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds857pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
- Rise Time14.5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)18V
- Drain Current-Max (Abs) (ID)9A
- Drain-source On Resistance-Max0.025Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)36A
- Avalanche Energy Rating (Eas)100 mJ
- RoHS StatusROHS3 Compliant
STS9NH3LL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 857pF @ 25V.This device has a continuous drain current (ID) of [9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 9A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.A maximum pulsed drain current of 36A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 18V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STS9NH3LL Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 36A.
STS9NH3LL Applications
There are a lot of STMicroelectronics
STS9NH3LL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 857pF @ 25V.This device has a continuous drain current (ID) of [9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 9A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.A maximum pulsed drain current of 36A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 18V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STS9NH3LL Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 36A.
STS9NH3LL Applications
There are a lot of STMicroelectronics
STS9NH3LL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STS9NH3LL More Descriptions
Power MOSFET Transistors NCh 30V 0.018 Ohm 9A
Trans MOSFET N-CH 30V 9A 8-Pin SO N T/R
MOSFET N-CH 30V 9A 2.5W 8-SOIC
N-Channel 30V - 0.018Ohm - 9A - SO-8
Power Field-Effect Transistor, 9A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 30V 9A 8-Pin SO N T/R
MOSFET N-CH 30V 9A 2.5W 8-SOIC
N-Channel 30V - 0.018Ohm - 9A - SO-8
Power Field-Effect Transistor, 9A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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