ANALOGICTECH STS9NF30L
- Part Number:
- STS9NF30L
- Manufacturer:
- ANALOGICTECH
- Ventron No:
- 5247244-STS9NF30L
- Description:
- N-CHANNEL 30V - 0.015 W - 9A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
- Datasheet:
- STS9NF30L
ANALOGICTECH STS9NF30L technical specifications, attributes, parameters and parts with similar specifications to ANALOGICTECH STS9NF30L.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating9A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTS9NF
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds730pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs12.5nC @ 4.5V
- Rise Time80ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±18V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)18V
- Drain Current-Max (Abs) (ID)9A
- Drain-source On Resistance-Max0.035Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)36A
- RoHS StatusROHS3 Compliant
STS9NF30L Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 730pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 36A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STS9NF30L Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 36A.
STS9NF30L Applications
There are a lot of STMicroelectronics
STS9NF30L applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 730pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 36A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STS9NF30L Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 36A.
STS9NF30L Applications
There are a lot of STMicroelectronics
STS9NF30L applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STS9NF30L More Descriptions
N-Channel 30V - 0.015 Ohm - 9A - SO-8 LOW GATE CHARGE STripFET(TM) II POWER MOSFET
Power MOSFET Transistors N-Ch 30 Volt 9 Amp
9 A 30 V 0.035 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 9A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Power MOSFET Transistors N-Ch 30 Volt 9 Amp
9 A 30 V 0.035 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 9A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
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