STS9NF30L

ANALOGICTECH STS9NF30L

Part Number:
STS9NF30L
Manufacturer:
ANALOGICTECH
Ventron No:
5247244-STS9NF30L
Description:
N-CHANNEL 30V - 0.015 W - 9A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
ECAD Model:
Datasheet:
STS9NF30L

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Specifications
ANALOGICTECH STS9NF30L technical specifications, attributes, parameters and parts with similar specifications to ANALOGICTECH STS9NF30L.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    STripFET™ II
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    9A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STS9NF
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    730pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12.5nC @ 4.5V
  • Rise Time
    80ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±18V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    9A
  • Gate to Source Voltage (Vgs)
    18V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain-source On Resistance-Max
    0.035Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    36A
  • RoHS Status
    ROHS3 Compliant
Description
STS9NF30L Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 730pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 36A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

STS9NF30L Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 36A.


STS9NF30L Applications
There are a lot of STMicroelectronics
STS9NF30L applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STS9NF30L More Descriptions
N-Channel 30V - 0.015 Ohm - 9A - SO-8 LOW GATE CHARGE STripFET(TM) II POWER MOSFET
Power MOSFET Transistors N-Ch 30 Volt 9 Amp
9 A 30 V 0.035 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 9A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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