STMicroelectronics STS9D8NH3LL

Name: STS9D8NH3LL
Brand: STMicroelectronics
SKU: 2473647-STS9D8NH3LL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STS9D8NH3LL

Manufacturer:: STMicroelectronics

Ventron No:: 2473647-STS9D8NH3LL

Description:: MOSFET 2N-CH 30V 8A/9A 8SOIC

ECAD Model:

Datasheet:: STS9D8NH3LL

Specifications

STMicroelectronics STS9D8NH3LL technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STS9D8NH3LL.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™
JESD-609 Code
e4
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
22MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STS9D8
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
857pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A 9A
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Rise Time
32ns
Fall Time (Typ)
8.5 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
9A
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
150 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STS9D8NH3LL Description
This device uses the latest advanced design rules of ST?ˉs STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.
STS9D8NH3LL Features
Optimal RDS(on) x Qg trade-off @ 4.5V ?? Conduction losses reduced ?? Switching losses reduced
STS9D8NH3LL Application
?? Switching applications

STS9D8NH3LL More Descriptions

Dual N-Channel 30 V 22/15 mOhm Surface Mount STripFET MOSFET - SOIC-8
Power MOSFET Transistors Dual N Ch 30V 0.012Ohm 9A
Trans MOSFET N-CH 30V 8A/9A 8-Pin SO N T/R
Dual N-channel 30V - 0.012Y - 9A SO-8
Power Field-Effect Transistor, 8A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Certification