STMicroelectronics STP3NK90ZFP
- Part Number:
- STP3NK90ZFP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2478258-STP3NK90ZFP
- Description:
- MOSFET N-CH 900V 3A TO-220FP
- Datasheet:
- STP3NK90ZFP
STMicroelectronics STP3NK90ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3NK90ZFP.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)245
- Base Part NumberSTP3N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max25W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation25W
- Case ConnectionISOLATED
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.8 Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds590pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3A Tc
- Gate Charge (Qg) (Max) @ Vgs22.7nC @ 10V
- Rise Time7ns
- Drain to Source Voltage (Vdss)900V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)3A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)3A
- DS Breakdown Voltage-Min900V
- Height16.4mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STP3NK90ZFP Description
These high voltage devices STP3NK90ZFP are Zener-protected N-channel power MOSFET developed by STMicroelectronics using SuperMESH protection technology and are optimized for the well-known power mesh gate. In addition to significantly reducing on-resistance, these devices are designed to ensure a high level of DV/DT capability for the most demanding applications. STP3NK90ZFP Features
?Extremely high dv/dt capability ? 100% avalanche tested ? Gate charge minimized ? Very low intrinsic capacitance ? Zener-protected STP3NK90ZFP Applications
? Switching applications
These high voltage devices STP3NK90ZFP are Zener-protected N-channel power MOSFET developed by STMicroelectronics using SuperMESH protection technology and are optimized for the well-known power mesh gate. In addition to significantly reducing on-resistance, these devices are designed to ensure a high level of DV/DT capability for the most demanding applications. STP3NK90ZFP Features
?Extremely high dv/dt capability ? 100% avalanche tested ? Gate charge minimized ? Very low intrinsic capacitance ? Zener-protected STP3NK90ZFP Applications
? Switching applications
STP3NK90ZFP More Descriptions
N-Channel 900 V 4.8 Ohm Flange Mount SuperMESH Power Mosfet - TO-220FP
Trans MOSFET N-CH 900V 3A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; On State resistance @ Vgs = 10V:4.8ohm; Package / Case:TO-220FP; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 900V 3A 3-Pin(3 Tab) TO-220FP Tube
Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; On State resistance @ Vgs = 10V:4.8ohm; Package / Case:TO-220FP; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to STP3NK90ZFP.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Base Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusResistanceDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Lead FreeVoltage - Rated DCReach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)View Compare
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STP3NK90ZFPACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)245STP3N3125W TcSingleENHANCEMENT MODE25WISOLATED18 nsN-ChannelSWITCHING4.8 Ω @ 1.5A, 10V4.5V @ 50μA590pF @ 25V3A Tc22.7nC @ 10V7ns900V10V±30V18 ns45 ns3A3.75VTO-220AB30V3A900V16.4mm10.4mm4.6mmNo SVHCNoROHS3 Compliant-------------
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--Through HoleThrough HoleTO-220-33SILICON150°C TJTubeMDmesh™ Ve3ObsoleteNot Applicable3-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)-STP35N31160W TcSingleENHANCEMENT MODE160WISOLATED60 nsN-ChannelSWITCHING98m Ω @ 13.5A, 10V5V @ 250μA3750pF @ 100V27A Tc83nC @ 10V12ns-10V±25V16 ns60 ns27A4VTO-220AB25V--15.75mm10.4mm4.6mmNo SVHCNoROHS3 Compliant98MOhm650V800 mJLead Free--------
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----TO220---Tube-packed-------------------------------------------RoHS Compliant------------
-
--Through HoleThrough HoleTO-220-3-SILICON150°C TJTubePowerMESH™e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDSTP3N31100W TcSingleENHANCEMENT MODE100W--N-ChannelSWITCHING6 Ω @ 1.5A, 10V4V @ 250μA700pF @ 25V3A Tc30nC @ 10V12ns1000V10V±30V28 ns-3A-TO-220AB30V3A------Non-RoHS Compliant-1kV244 mJContains Lead1kVnot_compliant3ANOT SPECIFIEDR-PSFM-T3Not Qualified6Ohm12A
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