STMicroelectronics STP16NF06

Name: STP16NF06
Brand: STMicroelectronics
SKU: 2478229-STP16NF06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP16NF06

Manufacturer:: STMicroelectronics

Ventron No:: 2478229-STP16NF06

Description:: MOSFET N-CH 60V 16A TO-220

ECAD Model:

Datasheet:: STP16NF06

Specifications

STMicroelectronics STP16NF06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NF06.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
100mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
16A
Base Part Number
STP16N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
315pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
16A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
64A
Height
9.15mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP16NF06 Description
This Power MOSFET is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP16NF06 Features
Exceptional DV/DT capability Low gate charge at 100°C Application-oriented characterization
STP16NF06 Applications
Switching application

STP16NF06 More Descriptions

Transistor MOSFET N Channel 60 Volt 16 Amp 3 Pin 3 Tab TO-220 Tube
N-Channel 60V - 0.08Ohm - 16A - TO-220 StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 60V 16A 3-Pin(3 Tab) TO-220AB Tube / MOSFET N-CH 60V 16A TO-220
N-Channel 60 V 0.1 O 10 nC STripFET II MosFet - TO-220
Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 60V, 16A, To-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP16NF06.

Product Comparison

The three parts on the right have similar specifications to STP16NF06.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Max Operating Temperature

Min Operating Temperature

Additional Feature

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP16NF06

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

100mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

16A

STP16N

3

1

45W Tc

Single

ENHANCEMENT MODE

45W

7 ns

N-Channel

SWITCHING

100m Ω @ 8A, 10V

4V @ 250μA

315pF @ 25V

16A Tc

13nC @ 10V

18ns

10V

±20V

6 ns

17 ns

16A

TO-220AB

20V

60V

64A

9.15mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

250V

MOSFET (Metal Oxide)

16A

STP16N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

TO-220AB

20V

250V

64A

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

0.28Ohm

600 mJ

-

-

-

-

-

STP16NF06 vs STP16NS25
STP11NM60FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

-

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

450mOhm

Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

11A

STP11N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

20 ns

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

TO-220AB

30V

600V

44A

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

150°C

-65°C

AVALANCHE RATED

-

-

STP16NF06 vs STP11NM60FD
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

-

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

Single

600V

STP16NF06 vs STP16N60M2