STMicroelectronics STLD200N4F6AG

Name: STLD200N4F6AG
Brand: STMicroelectronics
SKU: 2849993-STLD200N4F6AG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STLD200N4F6AG

Manufacturer:: STMicroelectronics

Ventron No:: 2849993-STLD200N4F6AG

Description:: MOSFET N-CH 40V 120A PWRFLAT 5X6

ECAD Model:

Datasheet:: STLD200N4F6AG

Specifications

STMicroelectronics STLD200N4F6AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STLD200N4F6AG.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, STripFET™ F6
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STLD20
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
158W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
10700pF @ 10V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
172nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
6.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
120A
Drain-source On Resistance-Max
0.002Ohm
Pulsed Drain Current-Max (IDM)
480A
DS Breakdown Voltage-Min
40V
Avalanche Energy Rating (Eas)
400 mJ
RoHS Status
ROHS3 Compliant

Description

STLD200N4F6AG Description
STLD200N4F6AG belongs to the family of N-channel STripFET? F6 power MOSFET developed by STMicroelectronics utilizing the STripFET? F6 technology as well as a new trench gate structure. It is a kind of electronic device specifically designed for automotive applications. Low RDS (on) in all packages can be ensured.

STLD200N4F6AG Features
Low gate charge
Low on-resistance
Low gate drive power loss
High avalanche ruggedness
Supplied in the PowerFLAT? 5x6 dual-side cooling package

STLD200N4F6AG Applications
Switching applications

STLD200N4F6AG More Descriptions

MOSFET Automotive-grade N-channel 40 V, 1.27 mOhm typ 120 A STripFET F6 Power MOSFET
Trans MOSFET N-CH 40V 120A Automotive 8-Pin Power Flat EP T/R
MOSFET, AEC-Q101, N-CH, 40V, 120A; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00127ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 158W; Transistor Case Style: PowerFLAT; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: STripFET F6 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification