STMicroelectronics STGWT38IH130D
- Part Number:
- STGWT38IH130D
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494305-STGWT38IH130D
- Description:
- IGBT 1300V 63A 250W TO3P
- Datasheet:
- STGW38IH130D
STMicroelectronics STGWT38IH130D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWT38IH130D.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3 Full Pack
- Weight6.500007g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation250W
- Base Part NumberSTGWT38
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max250W
- Turn-Off Delay Time424 ns
- Collector Emitter Voltage (VCEO)1.3kV
- Max Collector Current63A
- Collector Emitter Breakdown Voltage1.3kV
- Voltage - Collector Emitter Breakdown (Max)1300V
- Collector Emitter Saturation Voltage2.8V
- Test Condition960V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
- Gate Charge127nC
- Current - Collector Pulsed (Icm)125A
- Td (on/off) @ 25°C-/284ns
- Switching Energy3.4mJ (off)
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGWT38IH130D Description
STGWT38IH130D is a member of very fast IGBTs utilizing advanced PowerMESH? technology. It is able to deliver an excellent trade-off between switching performance and low on-state behavior. Moreover, it is characterized by low saturation voltage and high current capability. The NGTB15N120IHRWG is able to provide high efficiency in resonant or soft switching applications.
STGWT38IH130D Features
Low saturation voltage High current capability Low on-state behavior Advanced switching performance Package: TO-247
STGWT38IH130D Applications
Induction cooking Microwave ovens Soft-switching applications
STGWT38IH130D is a member of very fast IGBTs utilizing advanced PowerMESH? technology. It is able to deliver an excellent trade-off between switching performance and low on-state behavior. Moreover, it is characterized by low saturation voltage and high current capability. The NGTB15N120IHRWG is able to provide high efficiency in resonant or soft switching applications.
STGWT38IH130D Features
Low saturation voltage High current capability Low on-state behavior Advanced switching performance Package: TO-247
STGWT38IH130D Applications
Induction cooking Microwave ovens Soft-switching applications
STGWT38IH130D More Descriptions
Trans IGBT Chip N-CH 1.3KV 63A 3-Pin(3 Tab) TO-247 Tube
33 A - 1300 V - very fast IGBT
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
French Electronic Distributor since 1988
Insulated Gate Bipolar Transistor
33 A - 1300 V - very fast IGBT
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
French Electronic Distributor since 1988
Insulated Gate Bipolar Transistor
The three parts on the right have similar specifications to STGWT38IH130D.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationBase Part NumberElement ConfigurationInput TypePower - MaxTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRadiation HardeningRoHS StatusLead FreePower DissipationReverse Recovery TimeIGBT TypeFactory Lead TimeNumber of PinsSubcategoryPolarity/Channel TypeGate-Emitter Voltage-MaxHeightLengthWidthLifecycle StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureVoltage - Rated DCCurrent RatingPin CountNumber of ElementsTurn On Delay TimeTransistor ApplicationRise TimeTurn On TimeContinuous Collector CurrentTurn Off Time-Nom (toff)Gate-Emitter Thr Voltage-MaxREACH SVHCView Compare
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STGWT38IH130DThrough HoleThrough HoleTO-3P-3 Full Pack6.500007g-55°C~150°C TJTubePowerMESH™Obsolete1 (Unlimited)EAR99250WSTGWT38SingleStandard250W424 ns1.3kV63A1.3kV1300V2.8V960V, 20A, 10 Ω, 15V2.8V @ 15V, 20A127nC125A-/284ns3.4mJ (off)NoROHS3 CompliantLead Free------------------------------
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Through HoleThrough HoleTO-247-3--40°C~175°C TJTube-ObsoleteNot ApplicableEAR99260WSTGW30SingleStandard--600V60A600V-2.4V400V, 30A, 10 Ω, 15V2.4V @ 15V, 30A105nC120A50ns/160ns350μJ (on), 400μJ (off)NoROHS3 Compliant-260W110 nsTrench Field Stop--------------------------
-
Through HoleThrough HoleTO-247-3--55°C~175°C TJTube-Active1 (Unlimited)EAR99283WSTGW40SingleStandard--600V80A600V-2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A226nC160A-/208ns411μJ (off)NoROHS3 Compliant-283W-Trench Field Stop20 Weeks3Insulated Gate BIP TransistorsN-CHANNEL20V20.15mm15.75mm5.15mm------------------
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Through HoleThrough HoleTO-247-338.000013g-55°C~150°C TJTubePowerMESH™Active1 (Unlimited)EAR99200WSTGW20SingleStandard-100 ns600V60A600V-2.5V390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A100nC150A31ns/100ns220μJ (on), 330μJ (off)NoROHS3 CompliantLead Free200W44ns-8 Weeks3Insulated Gate BIP TransistorsN-CHANNEL20V20.15mm15.75mm5.15mmACTIVE (Last Updated: 8 months ago)SILICONe33Tin (Sn)ULTRA FAST600V30A3131 nsPOWER CONTROL11.5ns42.5 ns30A280 ns5.75VNo SVHC
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