STGWT38IH130D

STMicroelectronics STGWT38IH130D

Part Number:
STGWT38IH130D
Manufacturer:
STMicroelectronics
Ventron No:
2494305-STGWT38IH130D
Description:
IGBT 1300V 63A 250W TO3P
ECAD Model:
Datasheet:
STGW38IH130D

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Specifications
STMicroelectronics STGWT38IH130D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWT38IH130D.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3 Full Pack
  • Weight
    6.500007g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    250W
  • Base Part Number
    STGWT38
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    250W
  • Turn-Off Delay Time
    424 ns
  • Collector Emitter Voltage (VCEO)
    1.3kV
  • Max Collector Current
    63A
  • Collector Emitter Breakdown Voltage
    1.3kV
  • Voltage - Collector Emitter Breakdown (Max)
    1300V
  • Collector Emitter Saturation Voltage
    2.8V
  • Test Condition
    960V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 20A
  • Gate Charge
    127nC
  • Current - Collector Pulsed (Icm)
    125A
  • Td (on/off) @ 25°C
    -/284ns
  • Switching Energy
    3.4mJ (off)
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGWT38IH130D Description
STGWT38IH130D is a member of very fast IGBTs utilizing advanced PowerMESH? technology. It is able to deliver an excellent trade-off between switching performance and low on-state behavior. Moreover, it is characterized by low saturation voltage and high current capability. The NGTB15N120IHRWG is able to provide high efficiency in resonant or soft switching applications.

STGWT38IH130D Features
Low saturation voltage  High current capability Low on-state behavior Advanced switching performance Package: TO-247

STGWT38IH130D Applications
Induction cooking Microwave ovens Soft-switching applications
STGWT38IH130D More Descriptions
Trans IGBT Chip N-CH 1.3KV 63A 3-Pin(3 Tab) TO-247 Tube
33 A - 1300 V - very fast IGBT
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
French Electronic Distributor since 1988
Insulated Gate Bipolar Transistor
Product Comparison
The three parts on the right have similar specifications to STGWT38IH130D.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Radiation Hardening
    RoHS Status
    Lead Free
    Power Dissipation
    Reverse Recovery Time
    IGBT Type
    Factory Lead Time
    Number of Pins
    Subcategory
    Polarity/Channel Type
    Gate-Emitter Voltage-Max
    Height
    Length
    Width
    Lifecycle Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Rise Time
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    View Compare
  • STGWT38IH130D
    STGWT38IH130D
    Through Hole
    Through Hole
    TO-3P-3 Full Pack
    6.500007g
    -55°C~150°C TJ
    Tube
    PowerMESH™
    Obsolete
    1 (Unlimited)
    EAR99
    250W
    STGWT38
    Single
    Standard
    250W
    424 ns
    1.3kV
    63A
    1.3kV
    1300V
    2.8V
    960V, 20A, 10 Ω, 15V
    2.8V @ 15V, 20A
    127nC
    125A
    -/284ns
    3.4mJ (off)
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW30H60DF
    Through Hole
    Through Hole
    TO-247-3
    -
    -40°C~175°C TJ
    Tube
    -
    Obsolete
    Not Applicable
    EAR99
    260W
    STGW30
    Single
    Standard
    -
    -
    600V
    60A
    600V
    -
    2.4V
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    No
    ROHS3 Compliant
    -
    260W
    110 ns
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40V60DLF
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    -
    Active
    1 (Unlimited)
    EAR99
    283W
    STGW40
    Single
    Standard
    -
    -
    600V
    80A
    600V
    -
    2.35V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    226nC
    160A
    -/208ns
    411μJ (off)
    No
    ROHS3 Compliant
    -
    283W
    -
    Trench Field Stop
    20 Weeks
    3
    Insulated Gate BIP Transistors
    N-CHANNEL
    20V
    20.15mm
    15.75mm
    5.15mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW20NC60VD
    Through Hole
    Through Hole
    TO-247-3
    38.000013g
    -55°C~150°C TJ
    Tube
    PowerMESH™
    Active
    1 (Unlimited)
    EAR99
    200W
    STGW20
    Single
    Standard
    -
    100 ns
    600V
    60A
    600V
    -
    2.5V
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    No
    ROHS3 Compliant
    Lead Free
    200W
    44ns
    -
    8 Weeks
    3
    Insulated Gate BIP Transistors
    N-CHANNEL
    20V
    20.15mm
    15.75mm
    5.15mm
    ACTIVE (Last Updated: 8 months ago)
    SILICON
    e3
    3
    Tin (Sn)
    ULTRA FAST
    600V
    30A
    3
    1
    31 ns
    POWER CONTROL
    11.5ns
    42.5 ns
    30A
    280 ns
    5.75V
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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