STMicroelectronics STGP3NB60F

Name: STGP3NB60F
Brand: STMicroelectronics
SKU: 2495101-STGP3NB60F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP3NB60F

Manufacturer:: STMicroelectronics

Ventron No:: 2495101-STGP3NB60F

Description:: IGBT 600V 6A 68W TO220

ECAD Model:

Datasheet:: STGx3NB60F(D)

Specifications

STMicroelectronics STGP3NB60F technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP3NB60F.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
68W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
3A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGP3
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
25W
Input Type
Standard
Power - Max
68W
Transistor Application
MOTOR CONTROL
Rise Time
60ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
6A
Reverse Recovery Time
45 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Turn On Time
16.5 ns
Test Condition
480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 3A
Turn Off Time-Nom (toff)
535 ns
Gate Charge
16nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
12.5ns/105ns
Switching Energy
125μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

STGP3NB60F Description
The STGP3NB60F is a N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH? IGBT. STMicroelectronics has created an innovative family of IGBTs, the PowerMESH? IGBTs, with remarkable performances using the most recent high voltage technology based on a proprietary strip arrangement. A family with the suffix "F" has been designed to achieve extremely fast switching times for frequency applications (40 KHz).

STGP3NB60F Features
High current capability
Off losses include tail current
High frequency operation
Short circuit rated
High input impedance (voltage driven)
Low on-voltage drop (Vcesat)
Low gate charge

STGP3NB60F Applications
Motor controls
SMPS and PFC in both hard switching and resonant topologies
AC and DC motor drives offering speed control
It is used in choppers and inverters
It is used in solar inverters

STGP3NB60F More Descriptions

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3.0 A
IGBT, TO-220; Transistor type:IGBT; Current, Ic continuous a max:3A; Voltage, Vce sat max:2.4V; Power dissipation:60W; Case style:TO-220 (SOT-78B); Current, Ic @ Vce sat:3A; Current, Icm pulsed:24A; Current, If av:3A; Pins, No. of:3; Power, Pd:60W; Power, Ptot:60W; Temperature, Tj max:150°C; Temperature, Tj min:-55°C; Temperature, current:25°C; Temperature, full power rating:25°C; Time, fall:150ns; Time, rise:60ns; Transistor polarity:N; Voltage, Vceo:600V

Product Comparison

The three parts on the right have similar specifications to STGP3NB60F.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Input Type

Power - Max

Transistor Application

Rise Time

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Lead Free

Factory Lead Time

Number of Pins

ECCN Code

Case Connection

IGBT Type

Height

Length

Width

Radiation Hardening

Lifecycle Status

REACH SVHC

View Compare
STGP3NB60F

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

Insulated Gate BIP Transistors

600V

68W

NOT SPECIFIED

3A

NOT SPECIFIED

STGP3

3

R-PSFM-T3

Not Qualified

1

Single

25W

Standard

68W

MOTOR CONTROL

60ns

N-CHANNEL

2.4V

6A

45 ns

TO-220AB

600V

1.9V

16.5 ns

480V, 3A, 10 Ω, 15V

2.4V @ 15V, 3A

535 ns

16nC

24A

12.5ns/105ns

125μJ (off)

20V

5V

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-
STGP30V60DF

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

-

-

Active

1 (Unlimited)

3

-

Insulated Gate BIP Transistors

-

258W

-

-

-

STGP30

-

-

-

1

Single

258W

Standard

-

POWER CONTROL

-

N-CHANNEL

600V

60A

53ns

TO-220AB

600V

2.35V

59 ns

400V, 30A, 10 Ω, 15V

2.3V @ 15V, 30A

225 ns

163nC

120A

45ns/189ns

383μJ (on), 233μJ (off)

20V

-

ROHS3 Compliant

-

20 Weeks

3

EAR99

COLLECTOR

Trench Field Stop

15.75mm

10.4mm

4.6mm

No

-

-

STGP3NB60F vs STGP30V60DF
STGP100N30

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

STripFET™

-

Obsolete

1 (Unlimited)

3

-

Insulated Gate BIP Transistors

-

250W

-

-

-

STGP100

3

R-PSFM-T3

-

1

Single

-

Standard

250W

GENERAL PURPOSE SWITCHING

-

N-CHANNEL

330V

90A

-

TO-220AB

330V

-

-

180V, 25A, 10 Ω, 15V

2.5V @ 15V, 50A

310 ns

-

-

-/134ns

-

20V

5.5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

No

-

-

STGP3NB60F vs STGP100N30
STGP10M65DF2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

-

-

Active

1 (Unlimited)

-

-

-

-

115W

NOT SPECIFIED

-

NOT SPECIFIED

STGP10

-

-

-

-

Single

-

Standard

115W

-

-

-

2V

20A

96 ns

-

650V

1.55V

-

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

-

28nC

40A

19ns/91ns

120μJ (on), 270μJ (off)

-

-

ROHS3 Compliant

-

30 Weeks

3

EAR99

-

Trench Field Stop

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

No SVHC

STGP3NB60F vs STGP10M65DF2