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STGP30H65F

STMicroelectronics STGP30H65F

Part Number:
STGP30H65F
Manufacturer:
STMicroelectronics
Ventron No:
2494302-STGP30H65F
Description:
IGBT 650V 60A 260W TO-220AB
ECAD Model:
Datasheet:
STGP30H65F

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Specifications
STMicroelectronics STGP30H65F technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP30H65F.
  • Factory Lead Time
    52 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • ECCN Code
    EAR99
  • Max Power Dissipation
    260W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGP30
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    260W
  • Collector Emitter Voltage (VCEO)
    650V
  • Max Collector Current
    60A
  • Collector Emitter Breakdown Voltage
    650V
  • Collector Emitter Saturation Voltage
    2.4V
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    105nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    50ns/160ns
  • Switching Energy
    350μJ (on), 400μJ (off)
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGP30H65F Description
An IGBT called STGP30H65F was created employing a cutting-edge, proprietary trench gate and field stop construction. This IGBT series maximizes the efficiency of very high frequency converters by providing the ideal balance between conduction and switching losses. Additionally, an easier paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very tight parameter distribution.

STGP30H65F Features
Safe paralleling
Short-circuit rated
High speed switching
Low thermal resistance
Tight parameters distribution

STGP30H65F Applications
UPS
PFC
Inverter
STGP30H65F More Descriptions
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3 Tab) TO-220 Tube
Trench gate field-stop IGBT, H series 600 V, 30 A high speed
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STGP30H65F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Lifecycle Status
    Reverse Recovery Time
    Transistor Element Material
    Number of Terminations
    Subcategory
    Number of Elements
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Radiation Hardening
    Series
    Pin Count
    JESD-30 Code
    Qualification Status
    Gate-Emitter Thr Voltage-Max
    View Compare
  • STGP30H65F
    STGP30H65F
    STMicroelectronics
    52 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    6.000006g
    -55°C~175°C TJ
    Tube
    Active
    Not Applicable
    EAR99
    260W
    NOT SPECIFIED
    NOT SPECIFIED
    STGP30
    Single
    Standard
    260W
    650V
    60A
    650V
    2.4V
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    Trench Field Stop
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    20.15mm
    15.75mm
    5.15mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGP3HF60HD
    STGP3HF60HD
    STMicroelectronics
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    38W
    NOT SPECIFIED
    NOT SPECIFIED
    STGP3
    Single
    Standard
    38W
    2.95V
    7.5A
    600V
    -
    400V, 1.5A, 100 Ω, 15V
    2.95V @ 15V, 1.5A
    -
    12nC
    18A
    11ns/60ns
    19μJ (on), 12μJ (off)
    15.75mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    85 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGP30H65F vs STGP3HF60HD
  • STGP30V60DF
    STGP30V60DF
    STMicroelectronics
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    258W
    -
    -
    STGP30
    Single
    Standard
    -
    600V
    60A
    600V
    2.35V
    400V, 30A, 10 Ω, 15V
    2.3V @ 15V, 30A
    Trench Field Stop
    163nC
    120A
    45ns/189ns
    383μJ (on), 233μJ (off)
    15.75mm
    10.4mm
    4.6mm
    ROHS3 Compliant
    -
    -
    53ns
    SILICON
    3
    Insulated Gate BIP Transistors
    1
    258W
    COLLECTOR
    POWER CONTROL
    N-CHANNEL
    TO-220AB
    59 ns
    225 ns
    20V
    No
    -
    -
    -
    -
    -
    STGP30H65F vs STGP30V60DF
  • STGP19NC60W
    STGP19NC60W
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -65°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    130W
    NOT SPECIFIED
    NOT SPECIFIED
    STGP19
    Single
    Standard
    130W
    600V
    40A
    600V
    -
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    -
    25ns/90ns
    81μJ (on), 125μJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    SILICON
    3
    Insulated Gate BIP Transistors
    1
    -
    -
    POWER CONTROL
    N-CHANNEL
    TO-220AB
    33 ns
    204 ns
    20V
    -
    PowerMESH™
    3
    R-PSFM-T3
    Not Qualified
    5.75V
    STGP30H65F vs STGP19NC60W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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