STMicroelectronics STGB40H65FB

Name: STGB40H65FB
Brand: STMicroelectronics
SKU: 2494296-STGB40H65FB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGB40H65FB

Manufacturer:: STMicroelectronics

Ventron No:: 2494296-STGB40H65FB

Description:: TRENCH GATE FIELD-STOP IGBT, HB

ECAD Model:

Datasheet:: STGB40H65FB

Specifications

STMicroelectronics STGB40H65FB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB40H65FB.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HB
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGB40
Input Type
Standard
Power - Max
283W
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
210nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
40ns/142ns
Switching Energy
498μJ (on), 363μJ (off)
RoHS Status
ROHS3 Compliant

Description

STGB40H65FB Description
This STGB40H65FB is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGB40H65FB is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in a safer paralleling operation.
STGB40H65FB Features
? Maximum junction temperature: TJ = 175 °C ? High speed switching series ? Minimized tail current ? Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A ? Tight parameter distribution ? Safe paralleling ? Low thermal resistance

STGB40H65FB Applications
? Photovoltaic inverters ? High-frequency converters

STGB40H65FB More Descriptions

Igbt, 650V, 80A, 175Deg C, 283W Rohs Compliant: Yes |Stmicroelectronics STGB40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Trans IGBT Chip N-CH 650V 80A 3-Pin D2PAK T/R
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-263AB
IGBT Transistors IGBT & Power Bipolar

Product Comparison

The three parts on the right have similar specifications to STGB40H65FB.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Input Type

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Mount

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Current Rating

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Rise Time

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Thr Voltage-Max

Height

Length

Width

Radiation Hardening

Lead Free

Terminal Position

Configuration

Reverse Recovery Time

Turn On Delay Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Collector Emitter Saturation Voltage

View Compare
STGB40H65FB

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

20 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

HB

Active

1 (Unlimited)

NOT SPECIFIED

NOT SPECIFIED

STGB40

Standard

283W

650V

80A

400V, 40A, 5 Ω, 15V

2V @ 15V, 40A

Trench Field Stop

210nC

160A

40ns/142ns

498μJ (on), 363μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGB10NB37LZT4

STMicroelectronics

-

8 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-65°C~175°C TJ

Tape & Reel (TR)

PowerMESH™

Active

1 (Unlimited)

245

30

STGB10

Standard

-

-

-

328V, 10A, 1k Ω, 5V

1.8V @ 4.5V, 10A

-

28nC

40A

1.3μs/8μs

2.4mJ (on), 5mJ (off)

ROHS3 Compliant

Surface Mount

3

SILICON

e3

yes

2

EAR99

Matte Tin (Sn) - annealed

VOLTAGE CLAMPING

Insulated Gate BIP Transistors

125W

GULL WING

20A

3

R-PSSO-G2

1

Single

125W

COLLECTOR

AUTOMOTIVE IGNITION

340ns

N-CHANNEL

440V

20A

440V

440V

860 ns

17800 ns

2.4V

4.6mm

10.4mm

9.35mm

No

Lead Free

-

-

-

-

-

-

-

STGB40H65FB vs STGB10NB37LZT4
STGB30H60DFB

STMicroelectronics

-

20 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

-

Active

1 (Unlimited)

NOT SPECIFIED

NOT SPECIFIED

STGB30

Standard

260W

-

-

400V, 30A, 10 Ω, 15V

2V @ 15V, 30A

Trench Field Stop

149nC

120A

37ns/146ns

383μJ (on), 293μJ (off)

ROHS3 Compliant

Surface Mount

-

SILICON

-

-

2

EAR99

-

-

-

260W

GULL WING

-

-

R-PSSO-G2

1

-

-

COLLECTOR

POWER CONTROL

-

N-CHANNEL

2V

60A

600V

600V

51.1 ns

223 ns

-

-

-

-

-

-

SINGLE

SINGLE WITH BUILT-IN DIODE

53 ns

-

-

-

-

STGB40H65FB vs STGB30H60DFB
STGB20NB37LZT4

STMicroelectronics

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

PowerMESH™

Obsolete

1 (Unlimited)

245

30

STGB20

Standard

-

-

-

250V, 20A, 1k Ω, 4.5V

2V @ 4.5V, 20A

-

51nC

80A

2.3μs/2μs

11.8mJ (off)

ROHS3 Compliant

Surface Mount

3

SILICON

e3

-

2

EAR99

Matte Tin (Sn)

-

Insulated Gate BIP Transistors

200W

GULL WING

20A

3

R-PSSO-G2

1

Single

200W

COLLECTOR

POWER CONTROL

-

N-CHANNEL

375V

40A

425V

425V

2900 ns

15000 ns

2V

-

-

-

No

Lead Free

-

-

-

2.3 μs

2 μs

20A

2V

STGB40H65FB vs STGB20NB37LZT4