STGB30H60DF

STMicroelectronics STGB30H60DF

Part Number:
STGB30H60DF
Manufacturer:
STMicroelectronics
Ventron No:
2494345-STGB30H60DF
Description:
IGBT 600V 60A 260W D2PAK
ECAD Model:
Datasheet:
STGB30H60DF

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Specifications
STMicroelectronics STGB30H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB30H60DF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Cut Tape (CT)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    260W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGB30
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    260W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    110 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Max Breakdown Voltage
    600V
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    105nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    50ns/160ns
  • Switching Energy
    350μJ (on), 400μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • RoHS Status
    ROHS3 Compliant
Description
STGB30H60DF Description
This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. This IGBT series maximizes the efficiency of very high frequency converters by providing the ideal balance between conduction and switching losses. Additionally, an easier paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very tight parameter distribution.

STGB30H60DF Features
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short circuit rated
Ultrafast soft recovery antiparallel diode

STGB30H60DF Applications
Inverter
UPS
PFC
STGB30H60DF More Descriptions
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(2 Tab) D2PAK T/R
600 V, 30 A high speed trench gate field-stop IGBT
180pF ±5% 50V C0G, NP0 Ceramic Capacitor -55°C ~ 125°C Surface Mount, MLCC 0603 (1608 Metric) 0.063" L x 0.031" W (1.60mm x 0.80mm)
Product Comparison
The three parts on the right have similar specifications to STGB30H60DF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    Additional Feature
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Case Connection
    Turn On Delay Time
    Transistor Application
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Turn On Time
    Turn Off Time-Nom (toff)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Pbfree Code
    Terminal Finish
    Current Rating
    Power Dissipation
    Rise Time
    Gate-Emitter Thr Voltage-Max
    Weight
    View Compare
  • STGB30H60DF
    STGB30H60DF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -40°C~175°C TJ
    Cut Tape (CT)
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    260W
    NOT SPECIFIED
    NOT SPECIFIED
    STGB30
    Single
    Standard
    260W
    N-CHANNEL
    2.4V
    60A
    110 ns
    600V
    600V
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    Trench Field Stop
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGB18N40LZT4
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    150W
    -
    -
    STGB18
    Single
    Logic
    150W
    N-CHANNEL
    360V
    30A
    -
    420V
    420V
    300V, 10A, 5V
    1.7V @ 4.5V, 10A
    -
    29nC
    40A
    650ns/13.5μs
    -
    16V
    ROHS3 Compliant
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    SILICON
    Automotive, AEC-Q101, PowerMESH™
    e3
    2
    VOLTAGE CLAMPING
    GULL WING
    4
    R-PSSO-G2
    1
    COLLECTOR
    650 ns
    AUTOMOTIVE IGNITION
    13.5 μs
    1.35V
    4450 ns
    22200 ns
    4.6mm
    10.4mm
    9.35mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • STGB10NB37LZT4
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -65°C~175°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    125W
    245
    30
    STGB10
    Single
    Standard
    -
    N-CHANNEL
    440V
    20A
    -
    440V
    440V
    328V, 10A, 1k Ω, 5V
    1.8V @ 4.5V, 10A
    -
    28nC
    40A
    1.3μs/8μs
    2.4mJ (on), 5mJ (off)
    -
    ROHS3 Compliant
    -
    8 Weeks
    -
    SILICON
    PowerMESH™
    e3
    2
    VOLTAGE CLAMPING
    GULL WING
    3
    R-PSSO-G2
    1
    COLLECTOR
    -
    AUTOMOTIVE IGNITION
    -
    -
    860 ns
    17800 ns
    4.6mm
    10.4mm
    9.35mm
    -
    No
    Lead Free
    yes
    Matte Tin (Sn) - annealed
    20A
    125W
    340ns
    2.4V
    -
  • STGB10H60DF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Cut Tape (CT)
    Active
    1 (Unlimited)
    EAR99
    -
    115W
    NOT SPECIFIED
    NOT SPECIFIED
    STGB10
    Single
    Standard
    115W
    -
    600V
    20A
    107 ns
    600V
    600V
    400V, 10A, 10 Ω, 15V
    1.95V @ 15V, 10A
    Trench Field Stop
    57nC
    40A
    19.5ns/103ns
    83μJ (on), 140μJ (off)
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 7 months ago)
    20 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.5V
    -
    -
    4.6mm
    10.4mm
    9.35mm
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2.000002g
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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