STMicroelectronics STGB30H60DF
- Part Number:
- STGB30H60DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494345-STGB30H60DF
- Description:
- IGBT 600V 60A 260W D2PAK
- Datasheet:
- STGB30H60DF
STMicroelectronics STGB30H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB30H60DF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingCut Tape (CT)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation260W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGB30
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max260W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.4V
- Max Collector Current60A
- Reverse Recovery Time110 ns
- Collector Emitter Breakdown Voltage600V
- Max Breakdown Voltage600V
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
- IGBT TypeTrench Field Stop
- Gate Charge105nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C50ns/160ns
- Switching Energy350μJ (on), 400μJ (off)
- Gate-Emitter Voltage-Max20V
- RoHS StatusROHS3 Compliant
STGB30H60DF Description
This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. This IGBT series maximizes the efficiency of very high frequency converters by providing the ideal balance between conduction and switching losses. Additionally, an easier paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very tight parameter distribution.
STGB30H60DF Features
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short circuit rated
Ultrafast soft recovery antiparallel diode
STGB30H60DF Applications
Inverter
UPS
PFC
This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. This IGBT series maximizes the efficiency of very high frequency converters by providing the ideal balance between conduction and switching losses. Additionally, an easier paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very tight parameter distribution.
STGB30H60DF Features
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short circuit rated
Ultrafast soft recovery antiparallel diode
STGB30H60DF Applications
Inverter
UPS
PFC
STGB30H60DF More Descriptions
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(2 Tab) D2PAK T/R
600 V, 30 A high speed trench gate field-stop IGBT
180pF ±5% 50V C0G, NP0 Ceramic Capacitor -55°C ~ 125°C Surface Mount, MLCC 0603 (1608 Metric) 0.063" L x 0.031" W (1.60mm x 0.80mm)
600 V, 30 A high speed trench gate field-stop IGBT
180pF ±5% 50V C0G, NP0 Ceramic Capacitor -55°C ~ 125°C Surface Mount, MLCC 0603 (1608 Metric) 0.063" L x 0.031" W (1.60mm x 0.80mm)
The three parts on the right have similar specifications to STGB30H60DF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageMax Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsAdditional FeatureTerminal FormPin CountJESD-30 CodeNumber of ElementsCase ConnectionTurn On Delay TimeTransistor ApplicationTurn-Off Delay TimeCollector Emitter Saturation VoltageTurn On TimeTurn Off Time-Nom (toff)HeightLengthWidthREACH SVHCRadiation HardeningLead FreePbfree CodeTerminal FinishCurrent RatingPower DissipationRise TimeGate-Emitter Thr Voltage-MaxWeightView Compare
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STGB30H60DFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-40°C~175°C TJCut Tape (CT)Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors260WNOT SPECIFIEDNOT SPECIFIEDSTGB30SingleStandard260WN-CHANNEL2.4V60A110 ns600V600V400V, 30A, 10 Ω, 15V2.4V @ 15V, 30ATrench Field Stop105nC120A50ns/160ns350μJ (on), 400μJ (off)20VROHS3 Compliant---------------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)Active1 (Unlimited)EAR99Insulated Gate BIP Transistors150W--STGB18SingleLogic150WN-CHANNEL360V30A-420V420V300V, 10A, 5V1.7V @ 4.5V, 10A-29nC40A650ns/13.5μs-16VROHS3 CompliantACTIVE (Last Updated: 8 months ago)8 WeeksTinSILICONAutomotive, AEC-Q101, PowerMESH™e32VOLTAGE CLAMPINGGULL WING4R-PSSO-G21COLLECTOR650 nsAUTOMOTIVE IGNITION13.5 μs1.35V4450 ns22200 ns4.6mm10.4mm9.35mmNo SVHCNoLead Free-------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-65°C~175°C TJTape & Reel (TR)Active1 (Unlimited)EAR99Insulated Gate BIP Transistors125W24530STGB10SingleStandard-N-CHANNEL440V20A-440V440V328V, 10A, 1k Ω, 5V1.8V @ 4.5V, 10A-28nC40A1.3μs/8μs2.4mJ (on), 5mJ (off)-ROHS3 Compliant-8 Weeks-SILICONPowerMESH™e32VOLTAGE CLAMPINGGULL WING3R-PSSO-G21COLLECTOR-AUTOMOTIVE IGNITION--860 ns17800 ns4.6mm10.4mm9.35mm-NoLead FreeyesMatte Tin (Sn) - annealed20A125W340ns2.4V-
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJCut Tape (CT)Active1 (Unlimited)EAR99-115WNOT SPECIFIEDNOT SPECIFIEDSTGB10SingleStandard115W-600V20A107 ns600V600V400V, 10A, 10 Ω, 15V1.95V @ 15V, 10ATrench Field Stop57nC40A19.5ns/103ns83μJ (on), 140μJ (off)-ROHS3 CompliantACTIVE (Last Updated: 7 months ago)20 Weeks--------------1.5V--4.6mm10.4mm9.35mm---------2.000002g
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