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STD105N10F7AG

STMicroelectronics STD105N10F7AG

Part Number:
STD105N10F7AG
Manufacturer:
STMicroelectronics
Ventron No:
2478217-STD105N10F7AG
Description:
MOSFET N-CH 100V 80A DPAK
ECAD Model:
Datasheet:
STD105N10F7AG

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Specifications
STMicroelectronics STD105N10F7AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD105N10F7AG.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    Automotive, AEC-Q101, STripFET™ F7
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STD10
  • Configuration
    Single
  • Power Dissipation-Max
    120W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4369pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    61nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    80A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD105N10F7AG Description
This N-channel Power MOSFET employs STripFETTM F7 technology, which features an improved trench gate structure that lowers onstate resistance while lowering internal capacitance and gate charge for faster and more efficient switching.

STD105N10F7AG Features
Designed for use in automobiles and
AEC-Q101 accredited
RDS(on) is one of the lowest on the market.
Outstanding FoM (figure of merit)
EMI immunity requires a low Crss/Ciss ratio.
Avalanche toughness is high.

STD105N10F7AG Applications
Switching applications
STD105N10F7AG More Descriptions
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Automotive-grade N-channel 100 V, 6.8 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET, AEC-Q101, N-CH, 100V, 80A, 120W; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to STD105N10F7AG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Configuration
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Lead Free
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Radiation Hardening
    Factory Lead Time
    Contact Plating
    Element Configuration
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • STD105N10F7AG
    STD105N10F7AG
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Cut Tape (CT)
    Automotive, AEC-Q101, STripFET™ F7
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STD10
    Single
    120W Tc
    N-Channel
    8m Ω @ 40A, 10V
    4.5V @ 250μA
    4369pF @ 50V
    80A Tc
    61nC @ 10V
    100V
    10V
    ±20V
    80A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD15P6F6AG
    STD15P6F6AG
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, STripFET™ F6
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STD15
    -
    35W Tc
    P-Channel
    160m Ω @ 5A, 10V
    4V @ 250μA
    340pF @ 48V
    10A Tc
    6.4nC @ 10V
    60V
    10V
    ±20V
    10A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STD105N10F7AG vs STD15P6F6AG
  • STD12NM50ND
    STD12NM50ND
    STMicroelectronics
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C TJ
    Tape & Reel (TR)
    FDmesh™ II
    Obsolete
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD12
    SINGLE
    100W Tc
    N-Channel
    380m Ω @ 5.5A, 10V
    5V @ 250μA
    850pF @ 50V
    11A Tc
    30nC @ 10V
    500V
    10V
    ±25V
    11A
    ROHS3 Compliant
    Lead Free
    3
    SILICON
    e3
    2
    Matte Tin (Sn) - annealed
    SINGLE
    GULL WING
    3
    R-PSSO-G2
    1
    ENHANCEMENT MODE
    100W
    DRAIN
    12 ns
    SWITCHING
    15ns
    17 ns
    40 ns
    TO-252AA
    25V
    44A
    500V
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STD105N10F7AG vs STD12NM50ND
  • STD1NK60-1
    STD1NK60-1
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Surface Mount, Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -55°C~150°C TJ
    Tube
    SuperMESH™
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    260
    30
    STD1NK
    -
    30W Tc
    N-Channel
    8.5 Ω @ 500mA, 10V
    3.7V @ 250μA
    156pF @ 25V
    1A Tc
    10nC @ 10V
    -
    10V
    ±30V
    1A
    ROHS3 Compliant
    Lead Free
    3
    SILICON
    e3
    3
    -
    -
    -
    3
    -
    1
    ENHANCEMENT MODE
    30W
    -
    6.5 ns
    SWITCHING
    5ns
    25 ns
    19 ns
    -
    30V
    4A
    -
    No
    12 Weeks
    Tin
    Single
    3V
    1A
    600V
    25 mJ
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    STD105N10F7AG vs STD1NK60-1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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