ON Semiconductor SMUN5335DW1T2G
- Part Number:
- SMUN5335DW1T2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3584936-SMUN5335DW1T2G
- Description:
- TRANS NPN/PNP PREBIAS SOT363
- ECAD Model:
-
- Datasheet:
- SMUN5335DW1T2G
ON Semiconductor SMUN5335DW1T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5335DW1T2G.
- Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation187mW
- Terminal FormGULL WING
- Base Part NumberMUN53**DW1
- Pin Count6
- Reference StandardAEC-Q101
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)2.2k Ω
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor SMUN5335DW1T2G is a pre-biased, NPN/PNP transistor array in a SOT-363 package. It is designed for use in a wide range of applications, including power management, audio amplifiers, and motor control. The device features a low saturation voltage, low collector-emitter saturation voltage, and low collector-emitter leakage current. It also has a high current gain and a wide operating temperature range. The SMUN5335DW1T2G is ideal for use in applications where space is limited and high performance is required. It is also suitable for use in automotive and industrial applications.
SMUN5335DW1T2G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
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