Vishay Siliconix SIHA14N60E-E3
- Part Number:
- SIHA14N60E-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586187-SIHA14N60E-E3
- Description:
- MOSFET N-CH 600V 13A TO220
- Datasheet:
- SIHA14N60E-E3
Vishay Siliconix SIHA14N60E-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIHA14N60E-E3.
- Factory Lead Time18 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesE
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max147W Tc
- Power Dissipation147W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs309m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1205pF @ 100V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)13A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.309Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)32A
- Max Junction Temperature (Tj)150°C
- Height18.1mm
- RoHS StatusROHS3 Compliant
SIHA14N60E-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1205pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 32A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
SIHA14N60E-E3 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32A.
SIHA14N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHA14N60E-E3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1205pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 32A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
SIHA14N60E-E3 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 32A.
SIHA14N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHA14N60E-E3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
SIHA14N60E-E3 More Descriptions
Trans MOSFET N-CH 600V 13A 3-Pin(3 Tab) TO-220FP
Power MOSFET N-Channel 600V 13A 3-Pin TO-220
N-CHANNEL 600V
N-CH SINGLE 600V TO220FP
Contact for details
Power MOSFET N-Channel 600V 13A 3-Pin TO-220
N-CHANNEL 600V
N-CH SINGLE 600V TO220FP
Contact for details
The three parts on the right have similar specifications to SIHA14N60E-E3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightRoHS StatusMountNumber of PinsSupplier Device PackageWeightPublishedResistanceMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Threshold VoltageInput CapacitanceDrain to Source ResistanceRds On MaxREACH SVHCLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationOperating ModeCase ConnectionRise TimeFall Time (Typ)DS Breakdown Voltage-MinView Compare
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SIHA14N60E-E318 WeeksThrough HoleTO-220-3 Full PackNOSILICON-55°C~150°C TJTubeEActive1 (Unlimited)3MOSFET (Metal Oxide)R-PSFM-T311147W Tc147W15 nsN-ChannelSWITCHING309m Ω @ 7A, 10V4V @ 250μA1205pF @ 100V13A Tc64nC @ 10V10V±30V35 ns13ATO-220AB30V0.309Ohm600V32A150°C18.1mmROHS3 Compliant------------------------
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18 WeeksThrough HoleTO-220-3 Full Pack---55°C~150°C TJTube-Active1 (Unlimited)-MOSFET (Metal Oxide)---32W Tc--N-Channel-380mOhm @ 6A, 10V4V @ 250μA886pF @ 100V10.5A Tc50nC @ 10V10V±30V-10.5A---550V---ROHS3 CompliantThrough Hole3TO-220 Full Pack6.000006g2001330mOhm150°C-55°C500V4V886pF380mOhm380 mΩUnknownLead Free--------
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14 WeeksThrough HoleTO-220-3 Full Pack-SILICON-55°C~150°C TJTube-Active1 (Unlimited)3MOSFET (Metal Oxide)-1134W Tc-17 nsN-ChannelSWITCHING280m Ω @ 8A, 10V4V @ 250μA1350pF @ 100V15A Tc76nC @ 10V10V±30V35 ns15ATO-220AB20V0.28Ohm650V---ROHS3 CompliantThrough Hole3-6.000006g2014---600V4V---UnknownLead FreeNOT SPECIFIEDNOT SPECIFIEDSingleENHANCEMENT MODEISOLATED51ns33 ns-
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18 WeeksThrough HoleTO-220-3 Full Pack-SILICON-55°C~150°C TJTube-Active1 (Unlimited)3MOSFET (Metal Oxide)-1135W Tc-18 nsN-ChannelSWITCHING180m Ω @ 11A, 10V4V @ 250μA1920pF @ 100V21A Tc86nC @ 10V10V±30V66 ns21ATO-220AB20V--56A--ROHS3 CompliantThrough Hole3-6.000006g2005---600V4V---UnknownLead FreeNOT SPECIFIEDNOT SPECIFIEDSingleENHANCEMENT MODEISOLATED27ns35 ns600V
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