Vishay Siliconix SIB413DK-T1-GE3
- Part Number:
- SIB413DK-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490741-SIB413DK-T1-GE3
- Description:
- MOSFET P-CH 20V 9A SC75-6
- Datasheet:
- SIB413DK-T1-GE3
Vishay Siliconix SIB413DK-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIB413DK-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SC-75-6L
- Number of Pins6
- Supplier Device PackagePowerPAK® SC-75-6L Single
- Weight95.991485mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Resistance75mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max2.4W Ta 13W Tc
- Power Dissipation2.4W
- Turn On Delay Time20.5 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs75mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds357pF @ 10V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs7.63nC @ 5V
- Rise Time46ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)6.5 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)-9A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Dual Supply Voltage20V
- Input Capacitance357pF
- Drain to Source Resistance119mOhm
- Rds On Max75 mΩ
- Nominal Vgs-1.5 V
- Height750μm
- Length1.6mm
- Width1.6mm
- RoHS StatusROHS3 Compliant
SIB413DK-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 357pF @ 10V.This device conducts a continuous drain current (ID) of -9A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 119mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SIB413DK-T1-GE3 Features
a continuous drain current (ID) of -9A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 119mOhm
a 20V drain to source voltage (Vdss)
SIB413DK-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIB413DK-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 357pF @ 10V.This device conducts a continuous drain current (ID) of -9A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 119mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SIB413DK-T1-GE3 Features
a continuous drain current (ID) of -9A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 119mOhm
a 20V drain to source voltage (Vdss)
SIB413DK-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIB413DK-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SIB413DK-T1-GE3 More Descriptions
P-CHANNEL 20-V (D-S) MOSFET
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-9000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.143ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:-1.5V; Power Dissipation, Pd:2.4W ;RoHS Compliant: Yes
MOSFET, P, PPAK SC-75; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:20V; Current, Id Cont:9A; On State Resistance:0.075ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-1.5V; Case Style:SC-75; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C; Max Junction Temperature, Tj:150°C; Power Dissipation Pd:13W; Rise Time:46ns; Voltage, Vgs th Max:1.5V; Voltage, Vgs th Min:0.6V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-9000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.143ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:-1.5V; Power Dissipation, Pd:2.4W ;RoHS Compliant: Yes
MOSFET, P, PPAK SC-75; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:20V; Current, Id Cont:9A; On State Resistance:0.075ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-1.5V; Case Style:SC-75; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C; Max Junction Temperature, Tj:150°C; Power Dissipation Pd:13W; Rise Time:46ns; Voltage, Vgs th Max:1.5V; Voltage, Vgs th Min:0.6V
The three parts on the right have similar specifications to SIB413DK-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthRoHS StatusTransistor Element MaterialNumber of TerminationsECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Threshold VoltageREACH SVHCJESD-609 CodePbfree CodeTerminal FinishConfigurationRadiation HardeningView Compare
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SIB413DK-T1-GE3Surface MountSurface MountPowerPAK® SC-75-6L6PowerPAK® SC-75-6L Single95.991485mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)SMD/SMT75mOhm150°C-55°CMOSFET (Metal Oxide)12.4W Ta 13W Tc2.4W20.5 nsP-Channel75mOhm @ 6.5A, 4.5V1.5V @ 250μA357pF @ 10V9A Tc7.63nC @ 5V46ns20V2.5V 4.5V±12V6.5 ns20 ns-9A12V-20V20V357pF119mOhm75 mΩ-1.5 V750μm1.6mm1.6mmROHS3 Compliant---------------------------
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Surface MountSurface MountPowerPAK® SC-75-6L6---55°C~150°C TJTape & Reel (TR)TrenchFET®2009Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-2.4W Ta 13W Tc13W-P-Channel27m Ω @ 5.6A, 4.5V1V @ 250μA-9A Tc30nC @ 8V-12V1.5V 4.5V±10V3.2 ns-7.8A10V-12V--------ROHS3 CompliantSILICON3EAR99Other TransistorsDUALNO LEADNOT SPECIFIEDNOT SPECIFIED6S-XDSO-N3Not Qualified1SingleENHANCEMENT MODEDRAINSWITCHING9A0.027Ohm25A-------
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Surface MountSurface MountPowerPAK® SC-75-6L6PowerPAK® SC-75-6L Single95.991485mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2008Obsolete1 (Unlimited)SMD/SMT-150°C-55°CMOSFET (Metal Oxide)12.45W Ta 13.1W Tc2.45W16 nsP-Channel60mOhm @ 5.2A, 4.5V1V @ 250μA562pF @ 6V9A Tc11.82nC @ 5V42ns12V1.8V 4.5V±8V9 ns28 ns-9A8V-12V12V562pF89mOhm60 mΩ-1 V750μm1.6mm1.6mmROHS3 Compliant-----------1--------1VUnknown-----
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Surface MountSurface MountPowerPAK® SC-75-6L6---55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)SMD/SMT---MOSFET (Metal Oxide)-2.4W Ta 13W Tc2.4W13 nsP-Channel52m Ω @ 5.6A, 4.5V1V @ 250μA675pF @ 4V9A Tc12.75nC @ 5V31ns-1.2V 4.5V±5V18 ns35 ns-9A5V-8V8V----1 V---ROHS3 CompliantSILICON3EAR99Other TransistorsDUAL-260406S-XDSO-N3-1-ENHANCEMENT MODEDRAINSWITCHING9A0.052Ohm15A--e3yesMATTE TINSINGLE WITH BUILT-IN DIODENo
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