Vishay Siliconix SI7460DP-T1-GE3

SI7460DP-T1-GE3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI7460DP-T1-GE3 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 40A.
a threshold voltage of 1V


SI7460DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7460DP-T1-GE3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification