Vishay Siliconix SI7421DN-T1-E3

Name: SI7421DN-T1-E3
Brand: Vishay Siliconix
SKU: 2478245-SI7421DN-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7421DN-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478245-SI7421DN-T1-E3

Description:: MOSFET P-CH 30V 6.4A 1212-8

ECAD Model:

Datasheet:: SI7421DN-T1-E3

Specifications

Vishay Siliconix SI7421DN-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7421DN-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
25mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
S-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Current - Continuous Drain (Id) @ 25°C
6.4A Ta
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
57 ns
Continuous Drain Current (ID)
-9.8A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6.4A
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
30A
Height
1.04mm
Length
3.05mm
Width
3.05mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7421DN-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -9.8A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.A device can conduct a maximum continuous current of [6.4A] according to its drain current.It is [57 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI7421DN-T1-E3 Features
a continuous drain current (ID) of -9.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 30A.
a 30V drain to source voltage (Vdss)

SI7421DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7421DN-T1-E3 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

SI7421DN-T1-E3 More Descriptions

MOSFET P-CH 30V 6.4A 1212-8 / Trans MOSFET P-CH 30V 6.4A 8-Pin PowerPAK 1212 T/R
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IC COMP DUAL SINGLE/SUPPLY 8DIP
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-9800mA; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.043ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI7421DN-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Weight

Manufacturer Package Identifier

Threshold Voltage

Max Junction Temperature (Tj)

REACH SVHC

Input Capacitance (Ciss) (Max) @ Vds

Drain-source On Resistance-Max

View Compare
SI7421DN-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e3

yes

Active

1 (Unlimited)

5

EAR99

25mOhm

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

10 ns

P-Channel

SWITCHING

25m Ω @ 9.8A, 10V

3V @ 250μA

6.4A Ta

40nC @ 10V

13ns

30V

4.5V 10V

±20V

13 ns

57 ns

-9.8A

20V

6.4A

-30V

30A

1.04mm

3.05mm

3.05mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
SI7450DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Active

1 (Unlimited)

5

EAR99

80mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

1

1.9W Ta

Single

ENHANCEMENT MODE

1.9W

DRAIN

14 ns

N-Channel

SWITCHING

80m Ω @ 4A, 10V

4.5V @ 250μA

3.2A Ta

42nC @ 10V

20ns

-

6V 10V

±20V

20 ns

32 ns

3.2A

20V

-

200V

40A

1.17mm

4.9mm

5.89mm

No

ROHS3 Compliant

Lead Free

Tin

506.605978mg

S17-0173-Single

4.5V

150°C

Unknown

-

-

SI7421DN-T1-E3 vs SI7450DP-T1-GE3
SI7447ADP-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

-

5.4W Ta 83.3W Tc

Single

ENHANCEMENT MODE

5.4W

DRAIN

20 ns

P-Channel

SWITCHING

6.5m Ω @ 24A, 10V

3V @ 250μA

35A Tc

150nC @ 10V

25ns

-

10V

±25V

98 ns

82 ns

21.5A

25V

-

30V

60A

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

4650pF @ 15V

0.0065Ohm

SI7421DN-T1-E3 vs SI7447ADP-T1-E3
SI7409ADN-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

19mOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

-

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

DRAIN

30 ns

P-Channel

SWITCHING

19m Ω @ 11A, 4.5V

1.5V @ 250μA

7A Ta

40nC @ 4.5V

50ns

30V

2.5V 4.5V

±12V

50 ns

115 ns

-11A

12V

7A

-30V

40A

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

SI7421DN-T1-E3 vs SI7409ADN-T1-E3