Vishay Siliconix SI7302DN-T1-GE3
- Part Number:
- SI7302DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490863-SI7302DN-T1-GE3
- Description:
- MOSFET N-CH 220V 8.4A 1212-8
- Datasheet:
- SI7302DN-T1-GE3
Vishay Siliconix SI7302DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7302DN-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeS-XDSO-C5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 52W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.8W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs320m Ω @ 2.3A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds645pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8.4A Tc
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)220V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)2.3A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.32Ohm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI7302DN-T1-GE3 Overview
The maximum input capacitance of this device is 645pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 220V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7302DN-T1-GE3 Features
a continuous drain current (ID) of 2.3A
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)
SI7302DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7302DN-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 645pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 220V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7302DN-T1-GE3 Features
a continuous drain current (ID) of 2.3A
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)
SI7302DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7302DN-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI7302DN-T1-GE3 More Descriptions
Trans MOSFET N-CH 220V 2.3A 8-Pin PowerPAK 1212 T/R
N-CH 220V 8,4 320mOhm PwrPAK RoHSconf
MOSFET N-CH 220V 8.4A PPAK1212-8
N-CH 220V 8,4 320mOhm PwrPAK RoHSconf
MOSFET N-CH 220V 8.4A PPAK1212-8
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