SI7302DN-T1-GE3

Vishay Siliconix SI7302DN-T1-GE3

Part Number:
SI7302DN-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2490863-SI7302DN-T1-GE3
Description:
MOSFET N-CH 220V 8.4A 1212-8
ECAD Model:
Datasheet:
SI7302DN-T1-GE3

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Specifications
Vishay Siliconix SI7302DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7302DN-T1-GE3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    S-XDSO-C5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.8W Ta 52W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    320m Ω @ 2.3A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    645pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    8.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    220V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    2.3A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.32Ohm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI7302DN-T1-GE3 Overview
The maximum input capacitance of this device is 645pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 220V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI7302DN-T1-GE3 Features
a continuous drain current (ID) of 2.3A
the turn-off delay time is 20 ns
a 220V drain to source voltage (Vdss)


SI7302DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7302DN-T1-GE3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI7302DN-T1-GE3 More Descriptions
Trans MOSFET N-CH 220V 2.3A 8-Pin PowerPAK 1212 T/R
N-CH 220V 8,4 320mOhm PwrPAK RoHSconf
MOSFET N-CH 220V 8.4A PPAK1212-8
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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