Vishay Siliconix SI7139DP-T1-GE3

Name: SI7139DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2478220-SI7139DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7139DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478220-SI7139DP-T1-GE3

Description:: MOSFET P-CH 30V 40A PPAK SO-8

ECAD Model:

Datasheet:: SI7139DP-T1-GE3

Specifications

Vishay Siliconix SI7139DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7139DP-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
S17-0173-Single
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
5.5mOhm
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
JESD-30 Code
R-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
5W Ta 48W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
5W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4230pF @ 15V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
146nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
56 ns
Continuous Drain Current (ID)
-22.4A
Threshold Voltage
-1.2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
40A
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
70A
Avalanche Energy Rating (Eas)
45 mJ
Max Junction Temperature (Tj)
150°C
Height
1.17mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7139DP-T1-GE3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 45 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4230pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -22.4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.40A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 56 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-1.2V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI7139DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of -22.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 70A.
a threshold voltage of -1.2V
a 30V drain to source voltage (Vdss)

SI7139DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7139DP-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI7139DP-T1-GE3 More Descriptions

Single P-Channel 30 V 0.0055 Ohm 46 W Surface Mount Power Mosfet - PowerPAK SO-8
30V 40A 5.5m´Î@10V15A 5W 2.5V@250Ã×A P Channel PowerPAK SO-8 MOSFETs ROHS
Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R
Power Field-Effect Transistor, 22.4A I(D), 30V, 0.0055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-Ch 30V 40A 5,0W 0,0055R PowerPakSO8
MOSFET, P CH, -30V, -40A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-40A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-

Product Comparison

The three parts on the right have similar specifications to SI7139DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Rise Time

Fall Time (Typ)

Length

Width

Configuration

View Compare
SI7139DP-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

S17-0173-Single

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Active

1 (Unlimited)

5

EAR99

5.5mOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-XDSO-C5

1

1

5W Ta 48W Tc

Single

ENHANCEMENT MODE

5W

DRAIN

17 ns

P-Channel

SWITCHING

5.5m Ω @ 15A, 10V

2.5V @ 250μA

4230pF @ 15V

40A Tc

146nC @ 10V

30V

4.5V 10V

±20V

56 ns

-22.4A

-1.2V

20V

40A

-30V

70A

45 mJ

150°C

1.17mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
SI7120DN-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

-

-

-

Cut Tape (CT)

TrenchFET®

2014

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

S-XDSO-C5

1

-

-

Single

ENHANCEMENT MODE

1.5W

DRAIN

14 ns

N-Channel

SWITCHING

19m Ω @ 10A, 10V

3.5V @ 250μA

-

6.3A Ta

45nC @ 10V

-

-

-

50 ns

10A

2.5V

20V

6.3A

60V

40A

24 mJ

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

PURE MATTE TIN

150°C

-55°C

1.5W

12ns

12 ns

-

-

-

SI7139DP-T1-GE3 vs SI7120DN-T1-GE3
SI7113DN-T1-E3

Vishay Siliconix

14 Weeks

-

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Active

1 (Unlimited)

5

EAR99

134MOhm

-

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

8

S-PDSO-F5

1

1

3.7W Ta 52W Tc

Single

ENHANCEMENT MODE

3.7W

DRAIN

30 ns

P-Channel

SWITCHING

134m Ω @ 4A, 10V

3V @ 250μA

1480pF @ 50V

13.2A Tc

55nC @ 10V

100V

4.5V 10V

±20V

51 ns

-13.2A

-

20V

-

-100V

20A

-

-

1.04mm

-

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

-

-

-

110ns

40 ns

3.05mm

3.05mm

-

SI7139DP-T1-GE3 vs SI7113DN-T1-E3
SI7123DN-T1-GE3

Vishay Siliconix

12 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

10.6mOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

1

1.5W Ta

-

ENHANCEMENT MODE

1.5W

DRAIN

25 ns

P-Channel

SWITCHING

10.6m Ω @ 15A, 4.5V

1V @ 250μA

3729pF @ 10V

10.2A Ta

90nC @ 4.5V

20V

1.8V 4.5V

±8V

82 ns

-25A

-1V

8V

-

-20V

40A

-

-

1.04mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

88ns

88 ns

3.3mm

3.3mm

SINGLE WITH BUILT-IN DIODE

SI7139DP-T1-GE3 vs SI7123DN-T1-GE3

Certification

Related parts for SI7139DP-T1-GE3

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SI7139DP-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI7139DP-T1-GE3 DISTI #32316346	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	18000	3000 $0.9594
SI7139DP-T1-GE3 DISTI #30617071	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	624	13 $1.975
SI7139DP-T1-GE3 DISTI #SI7139DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 40A PPAK SO-8 RoHS: Compliant	3840	1 $1.59 10 $1.423 100 $1.1094 500 $0.91646 1000 $0.72352
SI7139DP-T1-GE3 DISTI #SI7139DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 40A PPAK SO-8 RoHS: Compliant	3840	1 $1.59 10 $1.423 100 $1.1094 500 $0.91646 1000 $0.72352
SI7139DP-T1-GE3 DISTI #SI7139DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 40A PPAK SO-8 RoHS: Compliant	3000	3000 $0.65562 6000 $0.62284 15000 $0.59942
SI7139DP-T1-GE3 DISTI #C1S806001173442	Vishay Intertechnologies	MOSFETs RoHS: Compliant	624	1 $1.58 10 $1.42 50 $1.34 100 $1.1 250 $1.02 500 $0.906
SI7139DP-T1-GE3 DISTI #V72:2272_09215623	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	0
SI7139DP-T1-GE3 DISTI #V36:1790_09215623	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000 $0.7867 30000 $0.7815 300000 $0.7494 1500000 $0.73 3000000 $0.7297
SI7139DP-T1-GE3 DISTI #SI7139DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	12000	3000 $0.3282 6000 $0.31558 9000 $0.30389 15000 $0.29304 30000 $0.28293 75000 $0.27814 150000 $0.2735
SI7139DP-T1-GE3 DISTI #SI7139DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	18000	3000 $0.6492 6000 $0.62994 12000 $0.60434 18000 $0.58762 30000 $0.57179
SI7139DP-T1-GE3 DISTI #SI7139DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000 $1.3749 6000 $0.9859 12000 $0.7999 18000 $0.7069 30000 $0.6759
SI7139DP-T1-GE3 DISTI #69W7221	Vishay Intertechnologies	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	1 $1.56 25 $1.29 50 $1.14 100 $0.986 250 $0.917 500 $0.848 1000 $0.669
SI7139DP-T1-GE3 DISTI #69W7221	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8, Tra	2973	1 $1.84 25 $1.63 50 $1.46 100 $1.29 250 $1.15 500 $1.01 1000 $0.811
SI7139DP-T1-GE3 DISTI #97W2692	Vishay Intertechnologies	MOSFET Transistor, P Channel, -40 A, -30 V, 0.0074	13154	1 $1.84 25 $1.63 50 $1.46 100 $1.29 250 $1.15 500 $1.01 1000 $0.811
SI7139DP-T1-GE3. DISTI #26AC3340	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8, FULL	18000	1 $0.768 1000 $0.736 2000 $0.669 4000 $0.603 6000 $0.58 10000 $0.567
SI7139DP-T1-GE3 DISTI #	Vishay Intertechnologies	Single P-Channel 30 V 0.0055 Ohm 46 W Surface Moun RoHS: Compliant	24000	3000 $0.585
SI7139DP-T1-GE3 DISTI #781-SI7139DP-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	10735	1 $1.55 10 $1.28 100 $0.985 500 $0.847 1000 $0.668 3000 $0.624 6000 $0.593 9000 $0.57
SI7139DP-T1-GE3 DISTI #	Vishay Siliconix	POWER FIELD-EFFECT TRANSISTOR, 22.4A I(D), 30V, 0.	3000	1 $2 1281 $0.55 2728 $0.525
SI7139DP-T1-GE3 DISTI #1807310	Vishay Intertechnologies	P-CH POWERPAK SO-8 BWL 30V 5.5MOHM @ 10, RL	3000	3000 $0.509
SI7139DP-T1-GE3 DISTI #2335355	Vishay Intertechnologies	MOSFET, P CH, -30V, -40A, POWERPAK SO RoHS: Compliant	17202	1 $2.4 10 $2.15 100 $1.68 500 $1.39 1000 $1.1
SI7139DP-T1-GE3 DISTI #2335355	Vishay Intertechnologies	MOSFET, P CH, -30V, -40A, POWERPAK SO	14762	1 $1.61 10 $1.29 100 $0.994 250 $0.883 500 $0.771
SI7139DP-T1-GE3 DISTI #XSFP00000063507	Vishay Siliconix	RoHS: Compliant	18000	3000 $0.8357 18000 $0.78
SI7139DP-T1-GE3 DISTI #SI7139DP-GE3	Vishay Intertechnologies	P-Ch 30V 40A 5,0W 0,0055R PowerPakSO8 RoHS: Compliant	2625	25 $0.787 100 $0.667 300 $0.607 1000 $0.5845
SI7139DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK SO-8	36000

SI7139D~~(1)~~
SI7139~~(1)~~
SI713~~(14)~~
SI71~~(127)~~
SI7~~(163)~~

Vishay Siliconix SI7139DP-T1-GE3

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