SI7115DN-T1-GE3

Vishay Siliconix SI7115DN-T1-GE3

Part Number:
SI7115DN-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2478213-SI7115DN-T1-GE3
Description:
MOSFET P-CH 150V 8.9A 1212-8
ECAD Model:
Datasheet:
SI7115DN-T1-GE3

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Specifications
Vishay Siliconix SI7115DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7115DN-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    295mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    S-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.7W Ta 52W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.7W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    295m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1190pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    8.9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Rise Time
    28ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    52 ns
  • Continuous Drain Current (ID)
    2.3A
  • Threshold Voltage
    -2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -150V
  • Nominal Vgs
    -2 V
  • Height
    1.04mm
  • Length
    3.05mm
  • Width
    3.05mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7115DN-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1190pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 52 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -2V, which means that it will not activate any of its functions when its threshold voltage reaches -2V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

SI7115DN-T1-GE3 Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 52 ns
a threshold voltage of -2V
a 150V drain to source voltage (Vdss)


SI7115DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7115DN-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI7115DN-T1-GE3 More Descriptions
Single P-Channel 150 V 295 mOhm 42 nC 52 W SMT Mosfet - PowerPAK ChipFET
Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 150V 8.9A 1212-8
MOSFET, P CH, -150V, -8.9A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.9A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.245ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI7115DN-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Configuration
    Pulsed Drain Current-Max (IDM)
    Weight
    Manufacturer Package Identifier
    Termination
    Additional Feature
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Terminal Finish
    Avalanche Energy Rating (Eas)
    View Compare
  • SI7115DN-T1-GE3
    SI7115DN-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    295mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    1
    3.7W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    3.7W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    295m Ω @ 4A, 10V
    4V @ 250μA
    1190pF @ 50V
    8.9A Tc
    42nC @ 10V
    28ns
    150V
    6V 10V
    ±20V
    35 ns
    52 ns
    2.3A
    -2V
    20V
    -150V
    -2 V
    1.04mm
    3.05mm
    3.05mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7123DN-T1-GE3
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    10.6mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C5
    1
    1
    1.5W Ta
    -
    ENHANCEMENT MODE
    1.5W
    DRAIN
    25 ns
    P-Channel
    SWITCHING
    10.6m Ω @ 15A, 4.5V
    1V @ 250μA
    3729pF @ 10V
    10.2A Ta
    90nC @ 4.5V
    88ns
    20V
    1.8V 4.5V
    ±8V
    88 ns
    82 ns
    -25A
    -1V
    8V
    -20V
    -
    1.04mm
    3.3mm
    3.3mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    SINGLE WITH BUILT-IN DIODE
    40A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7148DP-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    11mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    8
    R-PDSO-F5
    1
    1
    5.4W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    5.4W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    11m Ω @ 15A, 10V
    2.5V @ 250μA
    2900pF @ 35V
    28A Tc
    100nC @ 10V
    255ns
    -
    4.5V 10V
    ±20V
    100 ns
    39 ns
    28A
    2V
    20V
    75V
    2 V
    1.17mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    60A
    506.605978mg
    S17-0173-Single
    SMD/SMT
    AVALANCHE RATED
    75V
    150°C
    90ns
    96ns
    -
    -
  • SI7160DP-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    8.7MOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-PDSO-C5
    1
    -
    5W Ta 27.7W Tc
    -
    ENHANCEMENT MODE
    5W
    DRAIN
    29 ns
    N-Channel
    SWITCHING
    8.7m Ω @ 15A, 10V
    2.5V @ 250μA
    2970pF @ 15V
    20A Tc
    66nC @ 10V
    115ns
    -
    4.5V 10V
    ±16V
    21 ns
    43 ns
    17.8A
    -
    16V
    30V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    SINGLE WITH BUILT-IN DIODE
    60A
    -
    -
    -
    -
    -
    -
    -
    -
    Matte Tin (Sn)
    20 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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