Vishay Siliconix SI7115DN-T1-GE3
- Part Number:
- SI7115DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478213-SI7115DN-T1-GE3
- Description:
- MOSFET P-CH 150V 8.9A 1212-8
- Datasheet:
- SI7115DN-T1-GE3
Vishay Siliconix SI7115DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7115DN-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance295mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeS-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.7W Ta 52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.7W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs295m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1190pF @ 50V
- Current - Continuous Drain (Id) @ 25°C8.9A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time28ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time52 ns
- Continuous Drain Current (ID)2.3A
- Threshold Voltage-2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-150V
- Nominal Vgs-2 V
- Height1.04mm
- Length3.05mm
- Width3.05mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7115DN-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1190pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 52 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -2V, which means that it will not activate any of its functions when its threshold voltage reaches -2V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SI7115DN-T1-GE3 Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 52 ns
a threshold voltage of -2V
a 150V drain to source voltage (Vdss)
SI7115DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7115DN-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1190pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 52 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -2V, which means that it will not activate any of its functions when its threshold voltage reaches -2V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SI7115DN-T1-GE3 Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 52 ns
a threshold voltage of -2V
a 150V drain to source voltage (Vdss)
SI7115DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7115DN-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI7115DN-T1-GE3 More Descriptions
Single P-Channel 150 V 295 mOhm 42 nC 52 W SMT Mosfet - PowerPAK ChipFET
Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 150V 8.9A 1212-8
MOSFET, P CH, -150V, -8.9A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.9A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.245ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 150V 8.9A 1212-8
MOSFET, P CH, -150V, -8.9A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.9A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.245ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SI7115DN-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeConfigurationPulsed Drain Current-Max (IDM)WeightManufacturer Package IdentifierTerminationAdditional FeatureDual Supply VoltageMax Junction Temperature (Tj)Turn Off Time-Max (toff)Turn On Time-Max (ton)Terminal FinishAvalanche Energy Rating (Eas)View Compare
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SI7115DN-T1-GE314 WeeksTinSurface MountSurface MountPowerPAK® 1212-88SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)5EAR99295mOhmOther TransistorsMOSFET (Metal Oxide)DUALC BEND260308S-XDSO-C5113.7W Ta 52W TcSingleENHANCEMENT MODE3.7WDRAIN11 nsP-ChannelSWITCHING295m Ω @ 4A, 10V4V @ 250μA1190pF @ 50V8.9A Tc42nC @ 10V28ns150V6V 10V±20V35 ns52 ns2.3A-2V20V-150V-2 V1.04mm3.05mm3.05mmUnknownNoROHS3 CompliantLead Free-------------
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12 WeeksTinSurface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)5EAR9910.6mOhmOther TransistorsMOSFET (Metal Oxide)DUALC BEND260408S-XDSO-C5111.5W Ta-ENHANCEMENT MODE1.5WDRAIN25 nsP-ChannelSWITCHING10.6m Ω @ 15A, 4.5V1V @ 250μA3729pF @ 10V10.2A Ta90nC @ 4.5V88ns20V1.8V 4.5V±8V88 ns82 ns-25A-1V8V-20V-1.04mm3.3mm3.3mmUnknownNoROHS3 CompliantLead FreeSINGLE WITH BUILT-IN DIODE40A----------
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14 WeeksTinSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2007e3yesActive1 (Unlimited)5EAR9911mOhm-MOSFET (Metal Oxide)DUALFLAT--8R-PDSO-F5115.4W Ta 96W TcSingleENHANCEMENT MODE5.4WDRAIN17 nsN-ChannelSWITCHING11m Ω @ 15A, 10V2.5V @ 250μA2900pF @ 35V28A Tc100nC @ 10V255ns-4.5V 10V±20V100 ns39 ns28A2V20V75V2 V1.17mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free-60A506.605978mgS17-0173-SingleSMD/SMTAVALANCHE RATED75V150°C90ns96ns--
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--Surface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)5EAR998.7MOhm-MOSFET (Metal Oxide)DUALC BEND260308R-PDSO-C51-5W Ta 27.7W Tc-ENHANCEMENT MODE5WDRAIN29 nsN-ChannelSWITCHING8.7m Ω @ 15A, 10V2.5V @ 250μA2970pF @ 15V20A Tc66nC @ 10V115ns-4.5V 10V±16V21 ns43 ns17.8A-16V30V-----NoROHS3 CompliantLead FreeSINGLE WITH BUILT-IN DIODE60A--------Matte Tin (Sn)20 mJ
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