Vishay Siliconix SI6943BDQ-T1-E3
- Part Number:
- SI6943BDQ-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2474199-SI6943BDQ-T1-E3
- Description:
- MOSFET 2P-CH 12V 2.3A 8TSSOP
- ECAD Model:
-
- Datasheet:
- SI6943BDQ-T1-E3
Vishay Siliconix SI6943BDQ-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI6943BDQ-T1-E3.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Supplier Device Package8-TSSOP
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance80mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation800mW
- Base Part NumberSI6943
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation800mW
- Turn On Delay Time15 ns
- Power - Max800mW
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs80mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id800mV @ 250μA
- Current - Continuous Drain (Id) @ 25°C2.3A
- Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
- Rise Time35ns
- Drain to Source Voltage (Vdss)12V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)2.3A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-12V
- FET FeatureLogic Level Gate
- Drain to Source Resistance80mOhm
- Rds On Max80 mΩ
- Nominal Vgs-450 mV
- Height1.0414mm
- Length4.4958mm
- Width3.0988mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI6943BDQ-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI6943BDQ-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI6943BDQ-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI6943BDQ-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI6943BDQ-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI6943BDQ-T1-E3 More Descriptions
Trans MOSFET P-CH 12V 2.3A 8-Pin TSSOP T/R
DUAL P-CHANNEL 2.5-V (G-S) MOSFET | Siliconix / Vishay SI6943BDQ-T1-E3
Mosfet, Dual P Channel, -12V, -2.5A, Tssop-8
DUAL P-CHANNEL 2.5-V (G-S) MOSFET | Siliconix / Vishay SI6943BDQ-T1-E3
Mosfet, Dual P Channel, -12V, -2.5A, Tssop-8
The three parts on the right have similar specifications to SI6943BDQ-T1-E3.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountOperating ModeThreshold VoltageDrain Current-Max (Abs) (ID)FET TechnologyTerminal FinishNumber of ChannelsView Compare
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SI6943BDQ-T1-E3TinSurface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)88-TSSOP-55°C~150°C TJTape & Reel (TR)TrenchFET®2008Obsolete1 (Unlimited)80mOhm150°C-55°C800mWSI69432Dual800mW15 ns800mW2 P-Channel (Dual)80mOhm @ 2.5A, 4.5V800mV @ 250μA2.3A10nC @ 4.5V35ns12V35 ns35 ns2.3A8V-12VLogic Level Gate80mOhm80 mΩ-450 mV1.0414mm4.4958mm3.0988mmUnknownNoROHS3 CompliantLead Free------------------- -
TinSurface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8--55°C~150°C TJTape & Reel (TR)-2012Active1 (Unlimited)30MOhm--830mWSI69262Dual830mW6 ns-2 N-Channel (Dual)30m Ω @ 4.5A, 4.5V1V @ 250μA4.1A10.5nC @ 4.5V16ns20V16 ns46 ns4.5A8V-Logic Level Gate---1mm3mm4.4mmUnknownNoROHS3 CompliantLead Free14 Weeks157.991892mgSILICONe3yes8EAR99FET General Purpose PowersGULL WING260408ENHANCEMENT MODE1V4.1AMETAL-OXIDE SEMICONDUCTOR--
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-Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8--55°C~150°C TJTape & Reel (TR)TrenchFET®-Obsolete1 (Unlimited)31MOhm--830mWSI69812Dual1.14W35 ns-2 P-Channel (Dual)31m Ω @ 4.8A, 4.5V900mV @ 300μA-25nC @ 4.5V55ns20V52 ns120 ns4.1A8V20VLogic Level Gate---400 mV---UnknownNoROHS3 CompliantLead Free---e3---Other Transistors----ENHANCEMENT MODE--METAL-OXIDE SEMICONDUCTORMatte Tin (Sn)-
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-Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)88-TSSOP-55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)-150°C-55°C1W-2Dual1W13 ns1W2 P-Channel (Dual)45mOhm @ 3.5A, 10V1V @ 250μA (Min)-30nC @ 10V10ns30V10 ns33 ns3.5A20V-Logic Level Gate45mOhm45 mΩ-1mm3mm4.4mm--ROHS3 Compliant--157.991892mg---------------2
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