Vishay Siliconix SI5913DC-T1-GE3
- Part Number:
- SI5913DC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483434-SI5913DC-T1-GE3
- Description:
- MOSFET P-CH 20V 4A 1206-8
- Datasheet:
- SI5913DC-T1-GE3
Vishay Siliconix SI5913DC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5913DC-T1-GE3.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Weight84.99187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesLITTLE FOOT®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishPURE MATTE TIN
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.7W Ta 3.1W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time18 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs84m Ω @ 3.7A, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time40ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)3.7A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage-20V
- FET FeatureSchottky Diode (Isolated)
- RoHS StatusROHS3 Compliant
SI5913DC-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 330pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
SI5913DC-T1-GE3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a 20V drain to source voltage (Vdss)
SI5913DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5913DC-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 330pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
SI5913DC-T1-GE3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a 20V drain to source voltage (Vdss)
SI5913DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5913DC-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI5913DC-T1-GE3 More Descriptions
Trans MOSFET P-CH 20V 3.7A 8-Pin Chip FET T/R
P-CH 20-V (G-S) MOSFET W/SCHOTKY DIODE
French Electronic Distributor since 1988
P-CH 20-V (G-S) MOSFET W/SCHOTKY DIODE
French Electronic Distributor since 1988
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