Vishay Siliconix SI4965DY-T1-E3

Name: SI4965DY-T1-E3
Brand: Vishay Siliconix
SKU: 2475581-SI4965DY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4965DY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2475581-SI4965DY-T1-E3

Description:: MOSFET 2P-CH 8V 8SOIC

ECAD Model:

Datasheet:: SI4965DY-T1-E3

Specifications

Vishay Siliconix SI4965DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4965DY-T1-E3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
186.993455mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
21mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
35 ns
FET Type
2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs
21m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs
55nC @ 4.5V
Rise Time
45ns
Fall Time (Typ)
90 ns
Turn-Off Delay Time
170 ns
Continuous Drain Current (ID)
8A
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
-8V
Pulsed Drain Current-Max (IDM)
30A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.55mm
Length
5mm
Width
4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4965DY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4965DY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4965DY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI4965DY-T1-E3 More Descriptions

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,8V V(BR)DSS,8A I(D),SO
Trans MOSFET P-CH 8V 8A 8-Pin SOIC N T/R
8V, P-CH, 40mOhm, 1.8V RATED TRENCH

Product Comparison

The three parts on the right have similar specifications to SI4965DY-T1-E3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Base Part Number

Drain to Source Voltage (Vdss)

Reach Compliance Code

Qualification Status

Transistor Application

Current - Continuous Drain (Id) @ 25°C

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Input Capacitance (Ciss) (Max) @ Vds

Threshold Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

REACH SVHC

View Compare
SI4965DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

21mOhm

Matte Tin (Sn)

Other Transistors

2W

GULL WING

260

40

8

2

2

Dual

ENHANCEMENT MODE

2W

35 ns

2 P-Channel (Dual)

21m Ω @ 8A, 4.5V

450mV @ 250μA (Min)

55nC @ 4.5V

45ns

90 ns

170 ns

8A

8V

8A

-8V

30A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.55mm

5mm

4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4963BDY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

e3

yes

Active

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

Other Transistors

1.1W

GULL WING

260

40

8

2

-

Dual

ENHANCEMENT MODE

1.1W

30 ns

2 P-Channel (Dual)

32m Ω @ 6.5A, 4.5V

1.4V @ 250μA

21nC @ 4.5V

40ns

55 ns

80 ns

4.9A

12V

-

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.55mm

5mm

4mm

No

ROHS3 Compliant

-

14 Weeks

SI4963

20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI4965DY-T1-E3 vs SI4963BDY-T1-GE3
SI4974DY-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

-

MATTE TIN

FET General Purpose Power

1.1W

GULL WING

260

40

8

2

-

Dual

ENHANCEMENT MODE

2W

-

2 N-Channel (Dual)

19m Ω @ 8A, 10V

3V @ 250μA

11nC @ 4.5V

11ns

6 ns

15 ns

6A

20V

4.4A

30V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

ROHS3 Compliant

-

-

SI4974

-

unknown

Not Qualified

SWITCHING

6A 4.4A

-

-

-

-

-

-

-

-

-

-

-

SI4965DY-T1-E3 vs SI4974DY-T1-E3
SI4909DY-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

-

-

Active

1 (Unlimited)

-

-

-

-

-

3.2W

-

-

-

-

2

2

Dual

-

2W

10 ns

2 P-Channel (Dual)

27mOhm @ 8A, 10V

2.5V @ 250μA

63nC @ 10V

9ns

13 ns

50 ns

-8A

20V

-

-40V

-

-

Logic Level Gate

1.75mm

-

-

No

ROHS3 Compliant

Lead Free

14 Weeks

-

40V

-

-

-

8A

8-SO

150°C

-55°C

3.2W

2000pF @ 20V

-1.2V

2nF

150°C

21mOhm

27 mΩ

No SVHC

SI4965DY-T1-E3 vs SI4909DY-T1-GE3