SI4451DY-T1-E3

Vishay Siliconix SI4451DY-T1-E3

Part Number:
SI4451DY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2850472-SI4451DY-T1-E3
Description:
MOSFET P-CH 12V 10A 8-SOIC
ECAD Model:
Datasheet:
SI4451DY-T1-E3

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Specifications
Vishay Siliconix SI4451DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4451DY-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    8.25MOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.5W
  • Turn On Delay Time
    55 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.25m Ω @ 14A, 4.5V
  • Vgs(th) (Max) @ Id
    800mV @ 850μA
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 4.5V
  • Rise Time
    125ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    125 ns
  • Turn-Off Delay Time
    315 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    8V
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4451DY-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 315 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

SI4451DY-T1-E3 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 315 ns
a 12V drain to source voltage (Vdss)


SI4451DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4451DY-T1-E3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4451DY-T1-E3 More Descriptions
Single P-Channel 12 V 8.25 mOhms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R
MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V
Product Comparison
The three parts on the right have similar specifications to SI4451DY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    REACH SVHC
    Terminal Finish
    Input Capacitance
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • SI4451DY-T1-E3
    SI4451DY-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    8.25MOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    55 ns
    P-Channel
    SWITCHING
    8.25m Ω @ 14A, 4.5V
    800mV @ 850μA
    10A Ta
    120nC @ 4.5V
    125ns
    12V
    1.8V 4.5V
    ±8V
    125 ns
    315 ns
    10A
    8V
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4470EY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    1
    1.85W Ta
    Single
    -
    1.85W
    16 ns
    N-Channel
    -
    11mOhm @ 12A, 10V
    2V @ 250μA (Min)
    9A Ta
    70nC @ 10V
    12ns
    60V
    6V 10V
    ±20V
    12 ns
    50 ns
    12.7A
    20V
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    8-SO
    175°C
    -55°C
    2V
    60V
    60V
    11mOhm
    11 mΩ
    2 V
    No SVHC
    -
    -
    -
    -
    -
    -
  • SI4404DY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    6.5mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    20 ns
    N-Channel
    -
    6.5m Ω @ 23A, 10V
    3V @ 250μA
    15A Ta
    55nC @ 4.5V
    15ns
    -
    4.5V 10V
    ±20V
    40 ns
    105 ns
    23A
    20V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    30V
    -
    -
    -
    1 V
    Unknown
    MATTE TIN
    2nF
    -
    -
    -
    -
  • SI4466DY-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    -
    1.5W Ta
    Single
    ENHANCEMENT MODE
    -
    20 ns
    N-Channel
    -
    9m Ω @ 13.5A, 4.5V
    1.4V @ 250μA
    9.5A Ta
    60nC @ 4.5V
    15ns
    20V
    2.5V 4.5V
    ±12V
    15 ns
    150 ns
    9.5A
    12V
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Matte Tin (Sn)
    -
    MS-012AA
    0.009Ohm
    50A
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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