Vishay Siliconix SI4451DY-T1-E3
- Part Number:
- SI4451DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2850472-SI4451DY-T1-E3
- Description:
- MOSFET P-CH 12V 10A 8-SOIC
- Datasheet:
- SI4451DY-T1-E3
Vishay Siliconix SI4451DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4451DY-T1-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance8.25MOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- Turn On Delay Time55 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.25m Ω @ 14A, 4.5V
- Vgs(th) (Max) @ Id800mV @ 850μA
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs120nC @ 4.5V
- Rise Time125ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)125 ns
- Turn-Off Delay Time315 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)8V
- Height1.55mm
- Length5mm
- Width4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4451DY-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 315 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI4451DY-T1-E3 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 315 ns
a 12V drain to source voltage (Vdss)
SI4451DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4451DY-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 315 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI4451DY-T1-E3 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 315 ns
a 12V drain to source voltage (Vdss)
SI4451DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4451DY-T1-E3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4451DY-T1-E3 More Descriptions
Single P-Channel 12 V 8.25 mOhms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R
MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V
Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R
MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V
The three parts on the right have similar specifications to SI4451DY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCTerminal FinishInput CapacitanceJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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SI4451DY-T1-E314 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)8EAR998.25MOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260308111.5W TaSingleENHANCEMENT MODE1.5W55 nsP-ChannelSWITCHING8.25m Ω @ 14A, 4.5V800mV @ 850μA10A Ta120nC @ 4.5V125ns12V1.8V 4.5V±8V125 ns315 ns10A8V1.55mm5mm4mmNoROHS3 CompliantLead Free-----------------
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mg--55°C~175°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----111.85W TaSingle-1.85W16 nsN-Channel-11mOhm @ 12A, 10V2V @ 250μA (Min)9A Ta70nC @ 10V12ns60V6V 10V±20V12 ns50 ns12.7A20V1.55mm5mm4mmNoROHS3 CompliantLead Free8-SO175°C-55°C2V60V60V11mOhm11 mΩ2 VNo SVHC------
-
--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3-Obsolete1 (Unlimited)8EAR996.5mOhm-MOSFET (Metal Oxide)DUALGULL WING2604081-1.6W TaSingleENHANCEMENT MODE1.6W20 nsN-Channel-6.5m Ω @ 23A, 10V3V @ 250μA15A Ta55nC @ 4.5V15ns-4.5V 10V±20V40 ns105 ns23A20V---NoROHS3 CompliantLead Free----30V---1 VUnknownMATTE TIN2nF----
-
--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WING2603081-1.5W TaSingleENHANCEMENT MODE-20 nsN-Channel-9m Ω @ 13.5A, 4.5V1.4V @ 250μA9.5A Ta60nC @ 4.5V15ns20V2.5V 4.5V±12V15 ns150 ns9.5A12V---NoROHS3 Compliant-----------Matte Tin (Sn)-MS-012AA0.009Ohm50A20V
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