Vishay Siliconix SI4423DY-T1-E3

Name: SI4423DY-T1-E3
Brand: Vishay Siliconix
SKU: 2478230-SI4423DY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4423DY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478230-SI4423DY-T1-E3

Description:: MOSFET P-CH 20V 10A 8-SOIC

ECAD Model:

Datasheet:: SI4423DY-T1-E3

Specifications

Vishay Siliconix SI4423DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4423DY-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
7.5mOhm
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Turn On Delay Time
75 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 600μA
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
175nC @ 5V
Rise Time
165ns
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
165 ns
Turn-Off Delay Time
460 ns
Continuous Drain Current (ID)
-14A
Threshold Voltage
-400mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Nominal Vgs
-400 mV
Height
1.5494mm
Length
4.9784mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4423DY-T1-E3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -14A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 460 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 75 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-400mV is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

SI4423DY-T1-E3 Features
a continuous drain current (ID) of -14A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 460 ns
a threshold voltage of -400mV

SI4423DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4423DY-T1-E3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI4423DY-T1-E3 More Descriptions

Single P-Channel 20 V 7.5 mOhms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
20V 10A 7.5m´Î@4.5V14A 1.5W 900mV@600Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-14A; On Resistance, Rds(on):0.0075ohm; Rds(on) Test Voltage, Vgs:-4.5V ;RoHS Compliant: Yes
MOSFET,P CH,20V,10A,8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-400mV; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:-10A; Power Dissipation Pd:1.5W; Voltage Vgs Max:-8V

Product Comparison

The three parts on the right have similar specifications to SI4423DY-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Subcategory

Contact Plating

Drain to Source Voltage (Vdss)

Input Capacitance

View Compare
SI4423DY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

Active

1 (Unlimited)

8

EAR99

7.5mOhm

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

75 ns

P-Channel

SWITCHING

7.5m Ω @ 14A, 4.5V

900mV @ 600μA

10A Ta

175nC @ 5V

165ns

1.8V 4.5V

±8V

165 ns

460 ns

-14A

-400mV

8V

20V

-400 mV

1.5494mm

4.9784mm

3.9878mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
SI4408DY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

Active

1 (Unlimited)

8

EAR99

4.5mOhm

Matte Tin (Sn)

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

1

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

42 ns

N-Channel

SWITCHING

4.5m Ω @ 21A, 10V

1V @ 250μA (Min)

14A Ta

32nC @ 4.5V

42ns

4.5V 10V

±20V

26 ns

60 ns

21A

-

20V

20V

1 V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

yes

FET General Purpose Power

-

-

-

SI4423DY-T1-E3 vs SI4408DY-T1-E3
SI4425BDY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

Active

1 (Unlimited)

8

EAR99

12mOhm

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

20

8

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

15 ns

P-Channel

SWITCHING

12m Ω @ 11.4A, 10V

3V @ 250μA

8.8A Ta

100nC @ 10V

13ns

4.5V 10V

±20V

13 ns

100 ns

-11.4A

-400mV

20V

-30V

-400 mV

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

yes

Other Transistors

Tin

30V

-

SI4423DY-T1-E3 vs SI4425BDY-T1-E3
SI4404DY-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

Obsolete

1 (Unlimited)

8

EAR99

6.5mOhm

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

-

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

20 ns

N-Channel

-

6.5m Ω @ 23A, 10V

3V @ 250μA

15A Ta

55nC @ 4.5V

15ns

4.5V 10V

±20V

40 ns

105 ns

23A

-

20V

30V

1 V

-

-

-

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

2nF

SI4423DY-T1-E3 vs SI4404DY-T1-E3

Certification

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SI4423DY-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R RoHS: Compliant	1060	1 $2.1482 10 $1.8664 25 $1.8594 100 $1.5282 250 $1.5244 500 $1.3317 1000 $1.1348
SI4423DY-T1-E3 DISTI #	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC RoHS: Compliant	3237	1 $2.62 10 $2.365 100 $1.9007 500 $1.47834 1000 $1.22491
SI4423DY-T1-E3 DISTI #	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC RoHS: Compliant	3237	1 $2.62 10 $2.365 100 $1.9007 500 $1.47834 1000 $1.22491
SI4423DY-T1-E3 DISTI #	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC RoHS: Compliant	2500	2500 $1.10722
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R RoHS: Compliant	1060	6 $2.1482 10 $1.8664 25 $1.8594 100 $1.5282 250 $1.5244 500 $1.3318 1000 $1.1348
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Tape RoHS: Not Compliant	0	2500 $1.49 5000 $1.39 10000 $1.39 15000 $1.29 25000 $1.29
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Produ RoHS: Not Compliant	0	1 $2.68 10 $2.22 25 $2.05 50 $1.89 100 $1.72 250 $1.62 500 $1.51
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 14A, SOIC, Transistor Pol	1498	1 $2.68 10 $2.22 25 $2.05 50 $1.89 100 $1.72 250 $1.62 500 $1.51
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, 0.006OHM, -10A, SOIC-8, F	0	1 $1.18 2500 $1.17 5000 $1.14 10000 $1.1
SI4423DY-T1-E3 DISTI #	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	2500 $1.36 5000 $1.34 7500 $1.28
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 20 Volt 14 Amp 3.0W RoHS: Compliant	4280	1 $2.68 10 $2.22 100 $1.72 500 $1.51 1000 $1.25 2500 $1.17
SI4423DY-E3 DISTI #	Vishay Intertechnologies	MOSFET -20V -8A RoHS: Compliant	0
SI4423DYT1-E3 DISTI #	Vishay Intertechnologies	INSTOCK	1743
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 20 Volt 14 Amp 3.0W	0
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1060	1 $2.1482 25 $1.8594 250 $1.5244
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET,P CH,20V,10A,8SOIC RoHS: Compliant	1498	1 $4.15 10 $3.75 100 $3.01 500 $2.34 1000 $1.94
SI4423DY-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET,P CH,20V,10A,8SOIC RoHS: Compliant	1498	1 $1.05 10 $0.873

SI4423D~~(4)~~
SI4423~~(4)~~
SI442~~(57)~~
SI44~~(200)~~
SI4~~(201)~~

Vishay Siliconix SI4423DY-T1-E3

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