Vishay Siliconix SI4401BDY-T1-E3

SI4401BDY-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -40V.As a result of its turn-off delay time, which is 97 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -3V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI4401BDY-T1-E3 Features
a continuous drain current (ID) of -8.7A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 97 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)


SI4401BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4401BDY-T1-E3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.