Vishay Siliconix SI4378DY-T1-E3
- Part Number:
- SI4378DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478223-SI4378DY-T1-E3
- Description:
- MOSFET N-CH 20V 19A 8-SOIC
- Datasheet:
- SI4378DY-T1-E3
Vishay Siliconix SI4378DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4378DY-T1-E3.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance2.7mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time85 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.7m Ω @ 25A, 4.5V
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8500pF @ 10V
- Current - Continuous Drain (Id) @ 25°C19A Ta
- Gate Charge (Qg) (Max) @ Vgs55nC @ 4.5V
- Rise Time65ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)25A
- Threshold Voltage600mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Nominal Vgs600 mV
- Height1.55mm
- Length5mm
- Width4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4378DY-T1-E3 Overview
A device's maximum input capacitance is 8500pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 85 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 600mV.This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
SI4378DY-T1-E3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 140 ns
a threshold voltage of 600mV
SI4378DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4378DY-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 8500pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 85 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 600mV.This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
SI4378DY-T1-E3 Features
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 140 ns
a threshold voltage of 600mV
SI4378DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4378DY-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI4378DY-T1-E3 More Descriptions
Single N-Channel 20 V 0.027 Ohms Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 20V 19A 8-Pin SOIC N T/R
MOSFET, N CH, 20V, 0.0022OHM, 19A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Trans MOSFET N-CH 20V 19A 8-Pin SOIC N T/R
MOSFET, N CH, 20V, 0.0022OHM, 19A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SI4378DY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinReach Compliance CodeQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)JESD-30 CodeView Compare
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SI4378DY-T1-E315 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)8EAR992.7mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260308111.6W TaSingleENHANCEMENT MODE1.6W85 nsN-ChannelSWITCHING2.7m Ω @ 25A, 4.5V1.8V @ 250μA8500pF @ 10V19A Ta55nC @ 4.5V65ns2.5V 4.5V±12V65 ns140 ns25A600mV12V20V600 mV1.55mm5mm4mmUnknownNoROHS3 CompliantLead Free---------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3-Obsolete1 (Unlimited)8EAR99-MATTE TIN-MOSFET (Metal Oxide)DUALGULL WING260408111.47W TaSingleENHANCEMENT MODE1.47W10 nsN-ChannelSWITCHING8.5m Ω @ 15A, 10V3V @ 250μA-10A Ta18nC @ 4.5V13ns4.5V 10V±20V13 ns45 ns10A-20V--1.55mm5mm4mm-NoROHS3 Compliant-30V30V------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)8EAR99-MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2604081-3W Ta 6.6W TcSingleENHANCEMENT MODE3W-N-ChannelSWITCHING4.6m Ω @ 19.8A, 10V2V @ 250μA4800pF @ 15V29A Tc115nC @ 10V10ns4.5V 10V±12V8 ns47 ns19.8A-12V30V------ROHS3 Compliant---unknownNot Qualified29A0.0046Ohm60A-
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3-Obsolete1 (Unlimited)8EAR99-MATTE TIN-MOSFET (Metal Oxide)DUALGULL WING2604081-2.5W TaSingleENHANCEMENT MODE2.5W8 nsN-ChannelSWITCHING16.5m Ω @ 9.5A, 10V1.6V @ 250μA-9.5A Ta10.5nC @ 4.5V10ns4.5V 10V±12V9 ns28 ns9.5A-12V30V-----NoROHS3 Compliant------0.0165Ohm-R-PDSO-G8
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