Vishay Siliconix SI4122DY-T1-GE3
- Part Number:
- SI4122DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478211-SI4122DY-T1-GE3
- Description:
- MOSFET N-CH 40V 27.2A 8-SOIC
- Datasheet:
- SI4122DY-T1-GE3
Vishay Siliconix SI4122DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4122DY-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance4.5MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max3W Ta 6W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Turn On Delay Time42 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.5m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4200pF @ 20V
- Current - Continuous Drain (Id) @ 25°C27.2A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Rise Time34ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
- Fall Time (Typ)28 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)27.2A
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage40V
- Feedback Cap-Max (Crss)225 pF
- Height1.55mm
- Length5mm
- Width4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4122DY-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 42 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4122DY-T1-GE3 Features
a continuous drain current (ID) of 27.2A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
a threshold voltage of 2.5V
SI4122DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4122DY-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 42 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI4122DY-T1-GE3 Features
a continuous drain current (ID) of 27.2A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
a threshold voltage of 2.5V
SI4122DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4122DY-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4122DY-T1-GE3 More Descriptions
Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8
Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R / MOSFET N-CH 40V 27.2A 8-SOIC
N Channel Mosfet, 40V, 27.2A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:27.2A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.006Ohm; Rds(On) Test Voltage Vgs:25V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R / MOSFET N-CH 40V 27.2A 8-SOIC
N Channel Mosfet, 40V, 27.2A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:27.2A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.006Ohm; Rds(On) Test Voltage Vgs:25V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
The three parts on the right have similar specifications to SI4122DY-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeElement ConfigurationDrain Current-Max (Abs) (ID)Avalanche Energy Rating (Eas)Supplier Device PackageDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxMax Operating TemperatureMin Operating TemperatureDrain to Source ResistanceView Compare
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SI4122DY-T1-GE314 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesActive1 (Unlimited)8EAR994.5MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2603081SINGLE WITH BUILT-IN DIODE13W Ta 6W TcENHANCEMENT MODE3W42 nsN-ChannelSWITCHING4.5m Ω @ 15A, 10V2.5V @ 250μA4200pF @ 20V27.2A Tc95nC @ 10V34ns4.5V 10V±25V28 ns45 ns27.2A2.5V25V40V225 pF1.55mm5mm4mmUnknownNoROHS3 CompliantLead Free-----------
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009--Obsolete1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WING--81--2.5W Ta 5W TcENHANCEMENT MODE5W9 nsN-ChannelSWITCHING105m Ω @ 5A, 10V4.5V @ 250μA446pF @ 50V4.6A Tc13nC @ 10V9ns10V±20V8 ns10 ns3.2A2.5V20V100V-1.55mm5mm4mmUnknownNoROHS3 Compliant-Single4.6A4 mJ-------
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14 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Active1 (Unlimited)----MOSFET (Metal Oxide)--------2.4W Ta 5W Tc---N-Channel-20mOhm @ 8.3A, 10V2.2V @ 250μA490pF @ 15V12A Tc15nC @ 10V-4.5V 10V±20V--12A---------ROHS3 Compliant----8-SO30V490pF20 mΩ---
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1--2.4W Ta 4.8W Tc-2.4W10 nsN-Channel-158mOhm @ 2.7A, 10V4V @ 250μA370pF @ 50V3.8A Tc11nC @ 10V10ns6V 10V±20V10 ns12 ns2.7A-20V------NoROHS3 Compliant-Single--8-SO100V370pF158 mΩ150°C-55°C158mOhm
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