SI4122DY-T1-GE3

Vishay Siliconix SI4122DY-T1-GE3

Part Number:
SI4122DY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2478211-SI4122DY-T1-GE3
Description:
MOSFET N-CH 40V 27.2A 8-SOIC
ECAD Model:
Datasheet:
SI4122DY-T1-GE3

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Specifications
Vishay Siliconix SI4122DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4122DY-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    4.5MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta 6W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Turn On Delay Time
    42 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4200pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    27.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Rise Time
    34ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    28 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    27.2A
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    40V
  • Feedback Cap-Max (Crss)
    225 pF
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4122DY-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 42 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SI4122DY-T1-GE3 Features
a continuous drain current (ID) of 27.2A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 45 ns
a threshold voltage of 2.5V


SI4122DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4122DY-T1-GE3 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI4122DY-T1-GE3 More Descriptions
Si4122DY Series Single N-Channel 40 V 4.5 mOhm 6 W SMT Power Mosfet - SOIC-8
Trans MOSFET N-CH 40V 19.2A 8-Pin SOIC N T/R / MOSFET N-CH 40V 27.2A 8-SOIC
N Channel Mosfet, 40V, 27.2A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:27.2A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.006Ohm; Rds(On) Test Voltage Vgs:25V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI4122DY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Element Configuration
    Drain Current-Max (Abs) (ID)
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Rds On Max
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Resistance
    View Compare
  • SI4122DY-T1-GE3
    SI4122DY-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    4.5MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    SINGLE WITH BUILT-IN DIODE
    1
    3W Ta 6W Tc
    ENHANCEMENT MODE
    3W
    42 ns
    N-Channel
    SWITCHING
    4.5m Ω @ 15A, 10V
    2.5V @ 250μA
    4200pF @ 20V
    27.2A Tc
    95nC @ 10V
    34ns
    4.5V 10V
    ±25V
    28 ns
    45 ns
    27.2A
    2.5V
    25V
    40V
    225 pF
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4104DY-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    8
    1
    -
    -
    2.5W Ta 5W Tc
    ENHANCEMENT MODE
    5W
    9 ns
    N-Channel
    SWITCHING
    105m Ω @ 5A, 10V
    4.5V @ 250μA
    446pF @ 50V
    4.6A Tc
    13nC @ 10V
    9ns
    10V
    ±20V
    8 ns
    10 ns
    3.2A
    2.5V
    20V
    100V
    -
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    -
    Single
    4.6A
    4 mJ
    -
    -
    -
    -
    -
    -
    -
  • SI4176DY-T1-E3
    14 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.4W Ta 5W Tc
    -
    -
    -
    N-Channel
    -
    20mOhm @ 8.3A, 10V
    2.2V @ 250μA
    490pF @ 15V
    12A Tc
    15nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    8-SO
    30V
    490pF
    20 mΩ
    -
    -
    -
  • SI4102DY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    -
    2.4W Ta 4.8W Tc
    -
    2.4W
    10 ns
    N-Channel
    -
    158mOhm @ 2.7A, 10V
    4V @ 250μA
    370pF @ 50V
    3.8A Tc
    11nC @ 10V
    10ns
    6V 10V
    ±20V
    10 ns
    12 ns
    2.7A
    -
    20V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Single
    -
    -
    8-SO
    100V
    370pF
    158 mΩ
    150°C
    -55°C
    158mOhm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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