Vishay Siliconix SI3464DV-T1-GE3
- Part Number:
- SI3464DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484934-SI3464DV-T1-GE3
- Description:
- MOSFET N-CH 20V 8A 6-TSOP
- Datasheet:
- SI3464DV-T1-GE3
Vishay Siliconix SI3464DV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3464DV-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max2W Ta 3.6W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs24m Ω @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1065pF @ 10V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 5V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)8A
- Drain-source On Resistance-Max0.024Ohm
- Drain to Source Breakdown Voltage20V
- Nominal Vgs450 mV
- Height1.1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI3464DV-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1065pF @ 10V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
SI3464DV-T1-GE3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 22 ns
SI3464DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3464DV-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1065pF @ 10V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
SI3464DV-T1-GE3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 22 ns
SI3464DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3464DV-T1-GE3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SI3464DV-T1-GE3 More Descriptions
SI3464DV-T1-GE3 N-channel MOSFET Transistor, 8 A, 20 V, 6-Pin TSOP | Siliconix / Vishay SI3464DV-T1-GE3
Trans MOSFET N-CH 20V 7.5A 6-Pin TSOP T/R
N-CH MOSFET TSOP-6 20V 30MOHM @ 1.8V
Trans MOSFET N-CH 20V 7.5A 6-Pin TSOP T/R
N-CH MOSFET TSOP-6 20V 30MOHM @ 1.8V
The three parts on the right have similar specifications to SI3464DV-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusElement ConfigurationThreshold VoltageDrain to Source Voltage (Vdss)Supplier Device PackageTerminationResistanceMax Operating TemperatureMin Operating TemperatureDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxLead FreeView Compare
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SI3464DV-T1-GE314 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2014e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING2603061SINGLE WITH BUILT-IN DIODE12W Ta 3.6W TcENHANCEMENT MODE2W3 nsN-ChannelSWITCHING24m Ω @ 7.5A, 4.5V1V @ 250μA1065pF @ 10V8A Tc18nC @ 5V12ns1.8V 4.5V±8V8 ns22 ns8A8V8A0.024Ohm20V450 mV1.1mm3.05mm1.65mmUnknownNoROHS3 Compliant--------------
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)6EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2603061--1.14W TaENHANCEMENT MODE2W21 nsN-ChannelSWITCHING34m Ω @ 6.1A, 4.5V600mV @ 1mA (Min)-4.6A Ta12nC @ 4.5V45ns2.5V 4.5V±12V30 ns40 ns4.6A12V-0.034Ohm30V4 V---UnknownNoROHS3 CompliantSingle4V-----------
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)6---MOSFET (Metal Oxide)DUALGULL WING---1--1.14W TaENHANCEMENT MODE-11 nsP-ChannelSWITCHING48m Ω @ 5.3A, 10V3V @ 250μA-4A Ta25nC @ 10V14ns4.5V 10V±20V35 ns60 ns4A20V4A0.048Ohm-30V-----NoROHS3 CompliantSingle-30V----------
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66---55°C~150°C TJTape & Reel (TR)HEXFET®2004--Obsolete2 (1 Year)----MOSFET (Metal Oxide)-----1--2W Ta-2W12 nsP-Channel-65mOhm @ 4.4A, 4.5V1.2V @ 250μA1079pF @ 10V4.4A Ta15nC @ 4.5V33ns2.5V 4.5V±12V72 ns70 ns-4.4A12V---20V-1.2 V990.6μm3.0988mm1.7mmNo SVHCNoRoHS Compliant--1.2V20VMicro6™(TSOP-6)SMD/SMT65mOhm150°C-55°C-20V1.079nF65mOhm65 mΩLead Free
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