Vishay Siliconix SI1402DH-T1-GE3

Name: SI1402DH-T1-GE3
Brand: Vishay Siliconix
SKU: 2490890-SI1402DH-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI1402DH-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2490890-SI1402DH-T1-GE3

Description:: MOSFET N-CH 30V 2.7A SOT363

ECAD Model:

Datasheet:: SI1402DH-T1-GE3

Specifications

Vishay Siliconix SI1402DH-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1402DH-T1-GE3.

Factory Lead Time
111 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2010
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
950mW Ta
Turn On Delay Time
5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
77m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C
2.7A Ta
Gate Charge (Qg) (Max) @ Vgs
4.5nC @ 4.5V
Rise Time
12ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
2.7A
Gate to Source Voltage (Vgs)
12V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI1402DH-T1-GE3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.7A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.

SI1402DH-T1-GE3 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 13 ns
a 30V drain to source voltage (Vdss)

SI1402DH-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1402DH-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI1402DH-T1-GE3 More Descriptions

Trans MOSFET N-CH 30V 2.7A 6-Pin SC-70 T/R
MOSFET N-CH 30V 2.7A SOT363
N-CHANNEL 30-V (D-S) MOSFET

Product Comparison

The three parts on the right have similar specifications to SI1402DH-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Technology

Power Dissipation-Max

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Radiation Hardening

RoHS Status

Supplier Device Package

Weight

Resistance

Max Operating Temperature

Min Operating Temperature

Number of Elements

Number of Channels

Element Configuration

Power Dissipation

Input Capacitance (Ciss) (Max) @ Vds

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Lead Free

Threshold Voltage

Drain to Source Breakdown Voltage

Nominal Vgs

REACH SVHC

Transistor Element Material

Pbfree Code

Number of Terminations

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Operating Mode

DS Breakdown Voltage-Min

View Compare
SI1402DH-T1-GE3

Vishay Siliconix

111 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2010

e3

Obsolete

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

950mW Ta

5 ns

N-Channel

77m Ω @ 3A, 4.5V

1.6V @ 250μA

2.7A Ta

4.5nC @ 4.5V

12ns

30V

2.5V 4.5V

±12V

7 ns

13 ns

2.7A

12V

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI1405BDH-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2007

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1.47W Ta 2.27W Tc

10 ns

P-Channel

112mOhm @ 2.8A, 4.5V

950mV @ 250μA

1.6A Tc

5.5nC @ 4.5V

26ns

8V

1.8V 4.5V

±8V

26 ns

16 ns

1.6A

8V

No

ROHS3 Compliant

SC-70-6 (SOT-363)

7.512624mg

112mOhm

150°C

-55°C

1

1

Single

1.47W

305pF @ 4V

305pF

205mOhm

112 mΩ

1mm

2mm

1.25mm

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI1402DH-T1-GE3 vs SI1405BDH-T1-E3
SI1400DL-T1-E3

Vishay Siliconix

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2010

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

568mW Ta

10 ns

N-Channel

150mOhm @ 1.7A, 4.5V

600mV @ 250μA (Min)

1.6A Ta

4nC @ 4.5V

30ns

20V

2.5V 4.5V

±12V

8 ns

14 ns

1.7A

12V

No

ROHS3 Compliant

SC-70-6 (SOT-363)

7.512624mg

150MOhm

150°C

-55°C

1

1

Single

625mW

-

-

150mOhm

150 mΩ

1mm

2mm

1.25mm

Lead Free

600mV

20V

600 mV

Unknown

-

-

-

-

-

-

-

-

-

-

-

SI1402DH-T1-GE3 vs SI1400DL-T1-E3
SI1400DL-T1-GE3

Vishay Siliconix

13 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2010

e3

Obsolete

1 (Unlimited)

EAR99

PURE MATTE TIN

MOSFET (Metal Oxide)

568mW Ta

10 ns

N-Channel

150m Ω @ 1.7A, 4.5V

600mV @ 250μA (Min)

1.6A Ta

4nC @ 4.5V

30ns

20V

2.5V 4.5V

±12V

8 ns

14 ns

1.6A

12V

No

ROHS3 Compliant

-

7.512624mg

-

-

-

1

1

Single

568mW

-

-

-

-

-

-

-

-

-

-

-

-

SILICON

yes

6

FET General Purpose Powers

DUAL

GULL WING

260

30

6

ENHANCEMENT MODE

20V

SI1402DH-T1-GE3 vs SI1400DL-T1-GE3