Vishay Siliconix SI1024X-T1-GE3

Name: SI1024X-T1-GE3
Brand: Vishay Siliconix
SKU: 2473248-SI1024X-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI1024X-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2473248-SI1024X-T1-GE3

Description:: MOSFET 2N-CH 20V 0.485A SC89-6

ECAD Model:

Datasheet:: SI1024X-T1-GE3

Specifications

Vishay Siliconix SI1024X-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1024X-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
8.193012mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
700mOhm
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Max Power Dissipation
250mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
SI1024
Pin Count
6
Number of Elements
2
Number of Channels
1
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C
485mA
Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 4.5V
Continuous Drain Current (ID)
600mA
Threshold Voltage
450mV
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
0.485A
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.2mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI1024X-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1024X-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1024X-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI1024X-T1-GE3 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 485mA 6-Pin SOT-563 T/R
Dual N-Channel 20 V 0.7 Ohm Surface Mount Power Mosfet - SOT-563
DUAL N CHANNEL MOSFET, 20V, SC-89; Trans; DUAL N CHANNEL MOSFET, 20V, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:485mA; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.41ohm; Rds(on) Test Voltage Vgs:20V
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:485Ma; Continuous Drain Current Id P Channel:-; No. Of Pins:6Pins; Product Range:- Rohs Compliant: No |Vishay SI1024X-T1-GE3.

Certification