SBC846BPDW1T1G

ON Semiconductor SBC846BPDW1T1G

Part Number:
SBC846BPDW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
3813342-SBC846BPDW1T1G
Description:
TRANS NPN/PNP 65V 0.1A SOT363
ECAD Model:
Datasheet:
SBC846BPDW1T1G

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Specifications
ON Semiconductor SBC846BPDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SBC846BPDW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Weight
    7.512624mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    380mW
  • Terminal Form
    GULL WING
  • Frequency
    100MHz
  • Base Part Number
    BC846BP
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    380mW
  • Transistor Application
    AMPLIFIER
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    NPN, PNP
  • Collector Emitter Voltage (VCEO)
    65V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Max Breakdown Voltage
    65V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    -5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON Semiconductor SBC846BPDW1T1G is a high-performance, low-power, bipolar transistor array designed for automotive applications. This device features a NPN/PNP configuration with a maximum voltage rating of 65V and a maximum current rating of 0.1A. It is housed in a 6-pin SOT-363 package and is ideal for use in power management, motor control, and other automotive applications. The SBC846BPDW1T1G offers excellent thermal stability, low noise, and high switching speeds, making it an ideal choice for automotive applications. It is also RoHS compliant and AEC-Q101 qualified, ensuring reliable operation in harsh environments.
SBC846BPDW1T1G More Descriptions
Transistor Array, Aec-Q101, Npn/Pnp, 65V Rohs Compliant: Yes |Onsemi SBC846BPDW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
SBC846B Series 65 V 100 mA NPN/PNP Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN/PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel
65V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 65V; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SO
Automotive AEC-Q101 Tape & Reel (TR) Surface Mount NPN PNP Bipolar (BJT) Transistor Array 200 @ 2mA 5V 15nA ICBO 380mW 100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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