ON Semiconductor SBC846BPDW1T1G
- Part Number:
- SBC846BPDW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813342-SBC846BPDW1T1G
- Description:
- TRANS NPN/PNP 65V 0.1A SOT363
- Datasheet:
- SBC846BPDW1T1G
ON Semiconductor SBC846BPDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SBC846BPDW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Weight7.512624mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation380mW
- Terminal FormGULL WING
- Frequency100MHz
- Base Part NumberBC846BP
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation380mW
- Transistor ApplicationAMPLIFIER
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Transistor TypeNPN, PNP
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)-5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor SBC846BPDW1T1G is a high-performance, low-power, bipolar transistor array designed for automotive applications. This device features a NPN/PNP configuration with a maximum voltage rating of 65V and a maximum current rating of 0.1A. It is housed in a 6-pin SOT-363 package and is ideal for use in power management, motor control, and other automotive applications. The SBC846BPDW1T1G offers excellent thermal stability, low noise, and high switching speeds, making it an ideal choice for automotive applications. It is also RoHS compliant and AEC-Q101 qualified, ensuring reliable operation in harsh environments.
SBC846BPDW1T1G More Descriptions
Transistor Array, Aec-Q101, Npn/Pnp, 65V Rohs Compliant: Yes |Onsemi SBC846BPDW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
SBC846B Series 65 V 100 mA NPN/PNP Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN/PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel
65V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 65V; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SO
Automotive AEC-Q101 Tape & Reel (TR) Surface Mount NPN PNP Bipolar (BJT) Transistor Array 200 @ 2mA 5V 15nA ICBO 380mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
SBC846B Series 65 V 100 mA NPN/PNP Dual General Purpose Transistor - SOT-363
Trans GP BJT NPN/PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel
65V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 65V; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SO
Automotive AEC-Q101 Tape & Reel (TR) Surface Mount NPN PNP Bipolar (BJT) Transistor Array 200 @ 2mA 5V 15nA ICBO 380mW 100MHz
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