Cypress Semiconductor Corp S34ML08G101TFB000
- Part Number:
- S34ML08G101TFB000
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235423-S34ML08G101TFB000
- Description:
- IC FLASH 8GBIT 25NS 48TSOP
- Datasheet:
- S34ML08G1
Cypress Semiconductor Corp S34ML08G101TFB000 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S34ML08G101TFB000.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2016
- SeriesML-1
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- Terminal FinishMatte Tin (Sn)
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size8Gb 1G x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization1GX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Memory Density8589934592 bit
- Programming Voltage3V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusROHS3 Compliant
S34ML08G101TFB000 Overview
The product comes packaged in a tray and was published in 2016. It belongs to the ML-1 series and is currently discontinued. The technology used is FLASH - NAND and it has a memory size of 8Gb 1G x 8. The operating mode is asynchronous and the write cycle time for both word and page is 25 nanoseconds. The memory density is 8589934592 bits and the maximum seated height is 1.2mm.
S34ML08G101TFB000 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
S34ML08G101TFB000 Applications
There are a lot of Cypress Semiconductor Corp
S34ML08G101TFB000 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The product comes packaged in a tray and was published in 2016. It belongs to the ML-1 series and is currently discontinued. The technology used is FLASH - NAND and it has a memory size of 8Gb 1G x 8. The operating mode is asynchronous and the write cycle time for both word and page is 25 nanoseconds. The memory density is 8589934592 bits and the maximum seated height is 1.2mm.
S34ML08G101TFB000 Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
S34ML08G101TFB000 Applications
There are a lot of Cypress Semiconductor Corp
S34ML08G101TFB000 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
S34ML08G101TFB000 More Descriptions
SLC NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 Automotive 48-Pin TSOP-I Tray
TRAY PKGED / 1-BIT ECC, X8 I/O AND 3V VCC SPANSIONA(R) SLC NAND FLASH MEMORY
IC FLASH 8GBIT PARALLEL 48TSOP I
TRAY PKGED / 1-BIT ECC, X8 I/O AND 3V VCC SPANSIONA(R) SLC NAND FLASH MEMORY
IC FLASH 8GBIT PARALLEL 48TSOP I
The three parts on the right have similar specifications to S34ML08G101TFB000.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)Operating Temperature (Min)Temperature GradeParallel/SerialMemory IC TypeView Compare
-
S34ML08G101TFB00014 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~105°C TATray2016ML-1e3Discontinued3 (168 Hours)48Matte Tin (Sn)8542.32.00.51FLASH - NAND2.7V~3.6VDUAL13V0.5mmR-PDSO-G483.6V2.7V8Gb 1G x 8Non-VolatileASYNCHRONOUSFLASHParallel1GX8825ns8589934592 bit3V1.2mm18.4mm12mmROHS3 Compliant---------
-
---YES-Tray--e1Active3 (168 Hours)63Tin/Silver/Copper (Sn/Ag/Cu)-CMOS-BOTTOM13.3V0.8mmR-PBGA-B633.6V2.7V--ASYNCHRONOUS--512MX88-4294967296 bit3V1mm11mm9mmRoHS CompliantBALLNOT SPECIFIEDNOT SPECIFIED85°C-40°CINDUSTRIALPARALLELFLASH
-
---YES-Tray---Active3 (168 Hours)63--CMOS-BOTTOM13.3V0.8mmR-PBGA-B633.6V2.7V--ASYNCHRONOUS--128MX88-1073741824 bit3V1mm11mm9mmRoHS CompliantBALLNOT SPECIFIEDNOT SPECIFIED105°C-40°CINDUSTRIALPARALLELFLASH
-
---YES-Tray--e3Active3 (168 Hours)48Matte Tin (Sn)-CMOS-DUAL13.3V0.5mmR-PDSO-G483.6V2.7V--ASYNCHRONOUS--1GX88-8589934592 bit3V1.2mm18.4mm12mmRoHS CompliantGULL WING--85°C-40°CINDUSTRIALPARALLELFLASH
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