Cypress Semiconductor Corp S34ML01G100BHV000
- Part Number:
- S34ML01G100BHV000
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3232743-S34ML01G100BHV000
- Description:
- IC FLASH 1GBIT 25NS 63BGA
- Datasheet:
- S34ML01,02,04G1
Cypress Semiconductor Corp S34ML01G100BHV000 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S34ML01G100BHV000.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Number of Pins63
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2015
- SeriesML-1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations63
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Gb 128M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization128MX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Address Bus Width30b
- Density1 Gb
- Programming Voltage3V
- Page Size2kB
- Height Seated (Max)1mm
- Length11mm
- RoHS StatusROHS3 Compliant
S34ML01G100BHV000 Overview
The Moisture Sensitivity Level (MSL) of a product is an important factor to consider in its handling and storage. In this case, the MSL is 3 (168 Hours), indicating that the product can withstand exposure to moisture for up to 168 hours before it may be affected. The HTS Code for this product is 8542.32.00.51, which is used for classifying electronic integrated circuits. The Peak Reflow Temperature (Cel) for this product is NOT SPECIFIED, meaning that it can be exposed to a wide range of temperatures during the reflow process. The Supply Voltage required for this product is 3.3V, and it is a Non-Volatile memory type, meaning that it retains its data even when the power is turned off. It operates in ASYNCHRONOUS mode, which means that it does not require a clock signal to function. The Memory Format for this product is FLASH, which is a type of non-volatile memory that can be electrically erased and reprogrammed. The Organization of this memory is 128MX8, indicating that it has a capacity of 128 megabits and is organized into 8 bits per memory cell. The Address Bus Width is 30b, meaning that it can access up to 30 bits of memory at a time. Lastly, the Page Size of this product is 2kB, which is the amount of data that can be programmed or erased at once. Overall, these specifications provide important information for the proper handling and usage of this product.
S34ML01G100BHV000 Features
Package / Case: 63-VFBGA
63 Pins
S34ML01G100BHV000 Applications
There are a lot of Cypress Semiconductor Corp
S34ML01G100BHV000 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The Moisture Sensitivity Level (MSL) of a product is an important factor to consider in its handling and storage. In this case, the MSL is 3 (168 Hours), indicating that the product can withstand exposure to moisture for up to 168 hours before it may be affected. The HTS Code for this product is 8542.32.00.51, which is used for classifying electronic integrated circuits. The Peak Reflow Temperature (Cel) for this product is NOT SPECIFIED, meaning that it can be exposed to a wide range of temperatures during the reflow process. The Supply Voltage required for this product is 3.3V, and it is a Non-Volatile memory type, meaning that it retains its data even when the power is turned off. It operates in ASYNCHRONOUS mode, which means that it does not require a clock signal to function. The Memory Format for this product is FLASH, which is a type of non-volatile memory that can be electrically erased and reprogrammed. The Organization of this memory is 128MX8, indicating that it has a capacity of 128 megabits and is organized into 8 bits per memory cell. The Address Bus Width is 30b, meaning that it can access up to 30 bits of memory at a time. Lastly, the Page Size of this product is 2kB, which is the amount of data that can be programmed or erased at once. Overall, these specifications provide important information for the proper handling and usage of this product.
S34ML01G100BHV000 Features
Package / Case: 63-VFBGA
63 Pins
S34ML01G100BHV000 Applications
There are a lot of Cypress Semiconductor Corp
S34ML01G100BHV000 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
S34ML01G100BHV000 More Descriptions
TRAY PKGED / 1-BIT ECC, X8 I/O AND 3V VCC SPANSION(R) SLC NAND FLASH MEMORY, BGA
BGA-63(11x9) NAND FLASH ROHS
IC FLASH 1GBIT PARALLEL 63BGA
Flash, 128MX8, PBGA63
FLASH, 512KX16, 55NS, PDSO48
NAND Flash Nand
BGA-63(11x9) NAND FLASH ROHS
IC FLASH 1GBIT PARALLEL 63BGA
Flash, 128MX8, PBGA63
FLASH, 512KX16, 55NS, PDSO48
NAND Flash Nand
The three parts on the right have similar specifications to S34ML01G100BHV000.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityProgramming VoltagePage SizeHeight Seated (Max)LengthRoHS StatusSurface MountTerminal FormJESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Temperature GradeMemory DensityParallel/SerialMemory IC TypeWidthJESD-609 CodeTerminal FinishView Compare
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S34ML01G100BHV0006 WeeksSurface MountSurface Mount63-VFBGA63-40°C~105°C TATray2015ML-1Active3 (168 Hours)638542.32.00.51FLASH - NAND2.7V~3.6VBOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIED3.6V2.7V1Gb 128M x 8Non-VolatileASYNCHRONOUSFLASHParallel128MX8825ns30b1 Gb3V2kB1mm11mmROHS3 Compliant-------------
-
------Tray--Obsolete3 (168 Hours)63-CMOS-BOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIED3.6V2.7V--ASYNCHRONOUS--128MX88---3V-1mm11mmRoHS CompliantYESBALLR-PBGA-B6385°C-40°CINDUSTRIAL1073741824 bitPARALLELFLASH9mm--
-
------Tube--Active3 (168 Hours)48-CMOS-DUALNOT SPECIFIED13.3V0.5mmNOT SPECIFIED3.6V2.7V--ASYNCHRONOUS--512MX88---3V-1.2mm18.4mmRoHS CompliantYESGULL WINGR-PDSO-G4885°C-40°CINDUSTRIAL4294967296 bitPARALLELFLASH12mme3Matte Tin (Sn)
-
------Tray--Active3 (168 Hours)48-CMOS-DUAL-13.3V0.5mm-3.6V2.7V--ASYNCHRONOUS--1GX88---3V-1.2mm18.4mmRoHS CompliantYESGULL WINGR-PDSO-G4885°C-40°CINDUSTRIAL8589934592 bitPARALLELFLASH12mme3Matte Tin (Sn)
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