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S29WS512R0SBHW200

Cypress Semiconductor Corp S29WS512R0SBHW200

Part Number:
S29WS512R0SBHW200
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
3235669-S29WS512R0SBHW200
Description:
IC FLASH NOR 84FBGA
ECAD Model:
Datasheet:
S29WS512R,256R,128R

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Specifications
Cypress Semiconductor Corp S29WS512R0SBHW200 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29WS512R0SBHW200.
  • Mounting Type
    Surface Mount
  • Package / Case
    84-VFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -25°C~85°C TA
  • Packaging
    Tray
  • Series
    WS-R
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    84
  • Additional Feature
    SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK
  • Technology
    FLASH - NOR
  • Voltage - Supply
    1.7V~1.95V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • JESD-30 Code
    R-PBGA-B84
  • Supply Voltage-Max (Vsup)
    1.95V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    512Mb 32M x 16
  • Memory Type
    Non-Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    104MHz
  • Access Time
    80ns
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • Organization
    32MX16
  • Memory Width
    16
  • Write Cycle Time - Word, Page
    60ns
  • Memory Density
    536870912 bit
  • Programming Voltage
    1.8V
  • Boot Block
    TOP
  • Height Seated (Max)
    1mm
  • Length
    11.6mm
  • Width
    8mm
  • RoHS Status
    ROHS3 Compliant
Description
S29WS512R0SBHW200 Overview
Surface Mount is the preferred method of mounting electronic components onto a printed circuit board, and in this case, the component in question is a YES series WS-R chip. This chip has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand up to 168 hours of exposure to moisture without being damaged. The technology used in this chip is FLASH - NOR, which is a type of non-volatile memory that retains its data even when power is removed. It operates within a voltage range of 1.7V to 1.95V and has an access time of 80ns. With a memory density of 536870912 bits, this chip is capable of storing a large amount of data. Its compact size, with a maximum seated height of 1mm and a length of 11.6mm, makes it a versatile and efficient choice for various electronic applications.

S29WS512R0SBHW200 Features
Package / Case: 84-VFBGA
Additional Feature:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK


S29WS512R0SBHW200 Applications
There are a lot of Cypress Semiconductor Corp
S29WS512R0SBHW200 Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
Product Comparison
The three parts on the right have similar specifications to S29WS512R0SBHW200.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Operating Mode
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Memory Density
    Programming Voltage
    Boot Block
    Height Seated (Max)
    Length
    Width
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Subcategory
    Terminal Form
    Qualification Status
    Operating Temperature (Max)
    Operating Temperature (Min)
    Power Supplies
    Temperature Grade
    Supply Current-Max
    Standby Current-Max
    Access Time (Max)
    Parallel/Serial
    Memory IC Type
    Data Polling
    Toggle Bit
    Command User Interface
    Number of Sectors/Size
    Sector Size
    Common Flash Interface
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • S29WS512R0SBHW200
    S29WS512R0SBHW200
    Cypress Semiconductor Corp
    Surface Mount
    84-VFBGA
    YES
    -25°C~85°C TA
    Tray
    WS-R
    Obsolete
    3 (168 Hours)
    84
    SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK
    FLASH - NOR
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B84
    1.95V
    1.7V
    512Mb 32M x 16
    Non-Volatile
    SYNCHRONOUS
    104MHz
    80ns
    FLASH
    Parallel
    32MX16
    16
    60ns
    536870912 bit
    1.8V
    TOP
    1mm
    11.6mm
    8mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • S29WS256N0SBFW012
    S29WS256N0SBFW012
    Cypress Semiconductor Corp
    -
    -
    YES
    -
    Bulk
    -
    Obsolete
    1 (Unlimited)
    84
    SYNCHRONOUS BURST MODE OPERATION POSSIBLE
    CMOS
    -
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B84
    1.95V
    1.7V
    -
    -
    ASYNCHRONOUS
    -
    -
    -
    -
    16MX16
    16
    -
    268435456 bit
    1.8V
    BOTTOM/TOP
    1mm
    11.6mm
    8mm
    ROHS3 Compliant
    e1
    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
    Flash Memories
    BALL
    Not Qualified
    85°C
    -25°C
    1.8V
    OTHER
    0.066mA
    0.000005A
    70 ns
    PARALLEL
    FLASH
    YES
    YES
    YES
    8254
    16K64K
    YES
    -
    -
    S29WS512R0SBHW200 vs S29WS256N0SBFW012
  • S29WS128N0LBFW010
    S29WS128N0LBFW010
    Cypress Semiconductor Corp
    -
    -
    YES
    -
    Bulk
    -
    Obsolete
    1 (Unlimited)
    84
    SYNCHRONOUS BURST MODE OPERATION POSSIBLE
    CMOS
    -
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B84
    1.95V
    1.7V
    -
    -
    ASYNCHRONOUS
    -
    -
    -
    -
    8MX16
    16
    -
    134217728 bit
    1.8V
    -
    1mm
    11.6mm
    8mm
    ROHS3 Compliant
    e1
    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
    -
    BALL
    -
    85°C
    -25°C
    -
    OTHER
    -
    -
    70 ns
    PARALLEL
    FLASH
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    S29WS512R0SBHW200 vs S29WS128N0LBFW010
  • S29WS128N0SBAW013
    S29WS128N0SBAW013
    Cypress Semiconductor Corp
    -
    -
    YES
    -
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    84
    SYNCHRONOUS BURST MODE OPERATION POSSIBLE
    CMOS
    -
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B84
    1.95V
    1.7V
    -
    -
    ASYNCHRONOUS
    -
    -
    -
    -
    8MX16
    16
    -
    134217728 bit
    1.8V
    BOTTOM/TOP
    1mm
    11.6mm
    8mm
    ROHS3 Compliant
    -
    -
    Flash Memories
    BALL
    Not Qualified
    85°C
    -25°C
    1.8V
    OTHER
    0.066mA
    0.000005A
    70 ns
    PARALLEL
    FLASH
    YES
    YES
    YES
    8126
    16K64K
    YES
    -
    -
    S29WS512R0SBHW200 vs S29WS128N0SBAW013
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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