Cypress Semiconductor Corp S29GL512T12TFN010
- Part Number:
- S29GL512T12TFN010
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3234618-S29GL512T12TFN010
- Description:
- IC 512MB MEMORY
- ECAD Model:
-
- Datasheet:
- S29GL512T12TFN010
Cypress Semiconductor Corp S29GL512T12TFN010 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL512T12TFN010.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case56-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2016
- SeriesGL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations56
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G56
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time120ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization32MX16
- Memory Width16
- Write Cycle Time - Word, Page60ns
- Memory Density536870912 bit
- Programming Voltage2.7V
- Alternate Memory Width8
- Height Seated (Max)1.2mm
- Length18.4mm
- Width14mm
- RoHS StatusROHS3 Compliant
S29GL512T12TFN010 Overview
The GL-T series is an active part with FLASH - NOR technology. It has a maximum supply voltage of 3.6V and is a non-volatile memory type. With a fast access time of 120ns, it also has a quick write cycle time of 60ns for both word and page. The memory density of this series is 536870912 bits, providing ample space for storing data. In order to program this memory, a voltage of 2.7V is required. The length of this series is 18.4mm, making it compact and suitable for various applications. With these specifications, the GL-T series is a reliable and efficient choice for electronic devices.
S29GL512T12TFN010 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL512T12TFN010 Applications
There are a lot of Cypress Semiconductor Corp S29GL512T12TFN010 Memory applications.
graphics card
nonvolatile BIOS memory
multimedia computers
networking
personal computers
printers
hard disk drive (HDD)
telecommunications
Camcorders
workstations,
The GL-T series is an active part with FLASH - NOR technology. It has a maximum supply voltage of 3.6V and is a non-volatile memory type. With a fast access time of 120ns, it also has a quick write cycle time of 60ns for both word and page. The memory density of this series is 536870912 bits, providing ample space for storing data. In order to program this memory, a voltage of 2.7V is required. The length of this series is 18.4mm, making it compact and suitable for various applications. With these specifications, the GL-T series is a reliable and efficient choice for electronic devices.
S29GL512T12TFN010 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL512T12TFN010 Applications
There are a lot of Cypress Semiconductor Corp S29GL512T12TFN010 Memory applications.
graphics card
nonvolatile BIOS memory
multimedia computers
networking
personal computers
printers
hard disk drive (HDD)
telecommunications
Camcorders
workstations,
S29GL512T12TFN010 More Descriptions
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 120ns 56-Pin TSOP Tray
3.0 Volt Core, with VIO Option, 512 Mb Page-Mode Flash Memory, TSOP package
Nor/Tray Rohs Compliant: Yes |Infineon S29GL512T12TFN010
IC FLASH 512MBIT PARALLEL 56TSOP
PARALLEL NOR MIRRORBIT FLASH, 51
3.0 Volt Core, with VIO Option, 512 Mb Page-Mode Flash Memory, TSOP package
Nor/Tray Rohs Compliant: Yes |Infineon S29GL512T12TFN010
IC FLASH 512MBIT PARALLEL 56TSOP
PARALLEL NOR MIRRORBIT FLASH, 51
The three parts on the right have similar specifications to S29GL512T12TFN010.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageAlternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsJESD-609 CodeECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Power SuppliesNominal Supply CurrentAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyCommon Flash InterfaceRadiation HardeningSupplier Device PackageContact PlatingMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageView Compare
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S29GL512T12TFN01013 WeeksSurface Mount56-TFSOP (0.724, 18.40mm Width)YES-40°C~125°C TATray2016GL-TActive3 (168 Hours)568542.32.00.51FLASH - NOR2.7V~3.6VDUAL13V0.5mmR-PDSO-G563.6V2.7V512Mb 64M x 8Non-VolatileASYNCHRONOUS120nsFLASHParallel32MX161660ns536870912 bit2.7V81.2mm18.4mm14mmROHS3 Compliant------------------------------- -
13 WeeksSurface Mount64-LBGA--40°C~85°C TATray2015GL-SActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM13V1mm-3.6V2.7V1Gb 64M x 16Non-Volatile-100nsFLASHParallel-1660ns-3V-1.4mm13mm-ROHS3 CompliantSurface Mount64e13A991.B.1.ATin/Silver/Copper (Sn/Ag/Cu)260403/3.3V60mA26b1 Gb0.0001AAsynchronous16bYESYESYES1K64K32BYESYESNo-------
-
-Surface Mount64-LBGA--40°C~85°C TATape & Reel (TR)2015GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-110nsFLASHParallel--110ns------ROHS3 Compliant-----------------------64-Fortified BGA (13x11)------
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-110nsFLASHParallel--110ns------ROHS3 CompliantSurface Mount56--------1 Gb-----------No56-TSOPTin85°C-40°CParallel3.6V3V
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