Cypress Semiconductor Corp S29GL512T12DHVV20
- Part Number:
- S29GL512T12DHVV20
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3234054-S29GL512T12DHVV20
- Description:
- FLASH MEMORY NOR
- Datasheet:
- S29GL512T12DHVV20
Cypress Semiconductor Corp S29GL512T12DHVV20 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL512T12DHVV20.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2017
- SeriesGL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.65V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- JESD-30 CodeS-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time120ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization32MX16
- Memory Width16
- Write Cycle Time - Word, Page60ns
- Memory Density536870912 bit
- Programming Voltage2.7V
- Alternate Memory Width8
- Height Seated (Max)1.4mm
- Length9mm
- Width9mm
- RoHS StatusROHS3 Compliant
S29GL512T12DHVV20 Overview
The GL-T series is a popular and currently active product, with a supply voltage of 3V and a terminal pitch of 1mm. It is classified under the JESD-30 code S-PBGA-B64, making it a ball grid array package with 64 balls. This particular model has a memory size of 512Mb, organized in a 64M x 8 configuration. The write cycle time for a single word or page is 60ns, making it a fast and efficient option for memory storage. Additionally, it has an alternate memory width of 8, providing flexibility for different applications. With a maximum seated height of 1.4mm and a width of 9mm, this compact and versatile series is suitable for a wide range of electronic devices.
S29GL512T12DHVV20 Features
Package / Case: 64-LBGA
S29GL512T12DHVV20 Applications
There are a lot of Cypress Semiconductor Corp S29GL512T12DHVV20 Memory applications.
personal digital assistants
telecommunications
networks
personal computers
main computer memory
mainframes
nonvolatile BIOS memory
DVD disk buffer
data buffer
hard disk drive (HDD)
The GL-T series is a popular and currently active product, with a supply voltage of 3V and a terminal pitch of 1mm. It is classified under the JESD-30 code S-PBGA-B64, making it a ball grid array package with 64 balls. This particular model has a memory size of 512Mb, organized in a 64M x 8 configuration. The write cycle time for a single word or page is 60ns, making it a fast and efficient option for memory storage. Additionally, it has an alternate memory width of 8, providing flexibility for different applications. With a maximum seated height of 1.4mm and a width of 9mm, this compact and versatile series is suitable for a wide range of electronic devices.
S29GL512T12DHVV20 Features
Package / Case: 64-LBGA
S29GL512T12DHVV20 Applications
There are a lot of Cypress Semiconductor Corp S29GL512T12DHVV20 Memory applications.
personal digital assistants
telecommunications
networks
personal computers
main computer memory
mainframes
nonvolatile BIOS memory
DVD disk buffer
data buffer
hard disk drive (HDD)
S29GL512T12DHVV20 More Descriptions
Parallel NOR Flash Memory, 512 Mbit Density, 120 ns Initial Access Time, FBGA-64, RoHSCypress Semiconductor SCT
Flash, 32MX16, 120ns, PBGA64
IC FLASH 512MBIT PARALLEL 64FBGA
OEMs, CMs ONLY (NO BROKERS)
Flash, 2MX16, 70ns, PDSO48
FLASH MEMORY NOR
Flash, 32MX16, 120ns, PBGA64
IC FLASH 512MBIT PARALLEL 64FBGA
OEMs, CMs ONLY (NO BROKERS)
Flash, 2MX16, 70ns, PDSO48
FLASH MEMORY NOR
The three parts on the right have similar specifications to S29GL512T12DHVV20.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageAlternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsJESD-609 CodeECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Power SuppliesNominal Supply CurrentAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyCommon Flash InterfaceRadiation HardeningTime@Peak Reflow Temperature-Max (s)Supply Current-MaxAccess Time (Max)Contact PlatingSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageView Compare
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S29GL512T12DHVV2013 WeeksSurface Mount64-LBGAYES-40°C~105°C TATray2017GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOM13V1mmS-PBGA-B643.6V2.7V512Mb 64M x 8Non-VolatileASYNCHRONOUS120nsFLASHParallel32MX161660ns536870912 bit2.7V81.4mm9mm9mmROHS3 Compliant----------------------------------
-
13 WeeksSurface Mount64-LBGA--40°C~85°C TATray2015GL-SActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM13V1mm-3.6V2.7V1Gb 64M x 16Non-Volatile-100nsFLASHParallel-1660ns-3V-1.4mm13mm-ROHS3 CompliantSurface Mount64e13A991.B.1.ATin/Silver/Copper (Sn/Ag/Cu)260403/3.3V60mA26b1 Gb0.0001AAsynchronous16bYESYESYES1K64K32BYESYESNo----------
-
-Surface Mount64-LBGAYES-40°C~85°C TATray2015GL-PObsolete3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOM13V1mm-3.6V2.7V1Gb 128M x 8Non-Volatile--FLASHParallel1GX11130ns-3V81.4mm13mm11mmROHS3 Compliant-64e03A991.B.1.ATIN LEAD240-1.8/3.33/3.3V--1 Gb0.000005A--YESYESYES1K128K8/16wordsYESYESNo300.11mA130 ns-------
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-110nsFLASHParallel--110ns------ROHS3 CompliantSurface Mount56--------1 Gb-----------No---Tin56-TSOP85°C-40°CParallel3.6V3V
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