Cypress Semiconductor Corp S29GL512S11DHB020
- Part Number:
- S29GL512S11DHB020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3234242-S29GL512S11DHB020
- Description:
- IC FLASH 512MBIT 110NS 64BGA
- Datasheet:
- S29GL512S11DHB020
Cypress Semiconductor Corp S29GL512S11DHB020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL512S11DHB020.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Number of Pins64
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2015
- SeriesGL-S
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size512Mb 32M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Memory Width8
- Write Cycle Time - Word, Page60ns
- Memory Density536870912 bit
- Screening LevelAEC-Q100
- Programming Voltage3V
- Height Seated (Max)1.4mm
- Length9mm
- Width9mm
- RoHS StatusROHS3 Compliant
S29GL512S11DHB020 Overview
The product has 64 pins and is currently in an active production status. It utilizes FLASH - NOR technology and does not have a specified peak reflow temperature. The minimum supply voltage is 2.7V and it is a non-volatile memory type with a width of 8. It is also AEC-Q100 screened and has a maximum seated height of 1.4mm. The product is compliant with ROHS3 regulations.
S29GL512S11DHB020 Features
Package / Case: 64-LBGA
64 Pins
S29GL512S11DHB020 Applications
There are a lot of Cypress Semiconductor Corp S29GL512S11DHB020 Memory applications.
personal digital assistants
nonvolatile BIOS memory
personal computers
networks
supercomputers
printers
hard disk drive (HDD)
servers
Cache memory
telecommunications
The product has 64 pins and is currently in an active production status. It utilizes FLASH - NOR technology and does not have a specified peak reflow temperature. The minimum supply voltage is 2.7V and it is a non-volatile memory type with a width of 8. It is also AEC-Q100 screened and has a maximum seated height of 1.4mm. The product is compliant with ROHS3 regulations.
S29GL512S11DHB020 Features
Package / Case: 64-LBGA
64 Pins
S29GL512S11DHB020 Applications
There are a lot of Cypress Semiconductor Corp S29GL512S11DHB020 Memory applications.
personal digital assistants
nonvolatile BIOS memory
personal computers
networks
supercomputers
printers
hard disk drive (HDD)
servers
Cache memory
telecommunications
S29GL512S11DHB020 More Descriptions
NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16bit 110ns 64-Pin FBGA Tray
IC FLASH 512MBIT PARALLEL 64FBGA
512Mbit (Parallel) BGA-64 NOR FLASH ROHS
Nor/Tray |Cypress Infineon Technologies S29GL512S11DHB020
S29GL512S - 512-MBIT (64 MBYTE),
IC FLASH 512MBIT PARALLEL 64FBGA
512Mbit (Parallel) BGA-64 NOR FLASH ROHS
Nor/Tray |Cypress Infineon Technologies S29GL512S11DHB020
S29GL512S - 512-MBIT (64 MBYTE),
The three parts on the right have similar specifications to S29GL512S11DHB020.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceMemory WidthWrite Cycle Time - Word, PageMemory DensityScreening LevelProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusMountJESD-609 CodeECCN CodeTerminal FinishPower SuppliesNominal Supply CurrentOrganizationDensityStandby Current-MaxAccess Time (Max)Sync/AsyncAlternate Memory WidthData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyCommon Flash InterfaceRadiation HardeningSupplier Device PackageTime@Peak Reflow Temperature-Max (s)Supply Current-MaxView Compare
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S29GL512S11DHB02013 WeeksSurface Mount64-LBGAYES64-40°C~105°C TATray2015GL-SActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIED3.6V2.7V512Mb 32M x 16Non-VolatileASYNCHRONOUS110nsFLASHParallel860ns536870912 bitAEC-Q1003V1.4mm9mm9mmROHS3 Compliant-------------------------
-
-Surface Mount64-LBGA-64-40°C~85°C TATray2015GL-PObsolete3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM24013V1mm303.6V2.7V1Gb 128M x 8Non-Volatile--FLASHParallel1120ns--3V1.4mm13mm11mmROHS3 CompliantSurface Mounte03A991.B.1.ATIN LEAD3/3.3V110mA1GX11 Gb0.000005A120 nsAsynchronous8YESYESYES1K128K8/16wordsYESYESNo---
-
-Surface Mount64-LBGA---40°C~85°C TATape & Reel (TR)2015GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V--------1Gb 128M x 8Non-Volatile-110nsFLASHParallel-110ns------ROHS3 Compliant---------------------64-Fortified BGA (13x11)--
-
-Surface Mount64-LBGAYES64-40°C~85°C TATray2015GL-PObsolete3 (168 Hours)648542.32.00.51FLASH - NOR1.65V~3.6VBOTTOM24013V1mm-3.6V2.7V1Gb 128M x 8Non-Volatile--FLASHParallel1130ns--3V1.4mm13mm11mmROHS3 Compliant-e03A991.B.1.ATIN LEAD1.8/3.33/3.3V-1GX11 Gb0.000005A130 ns-8YESYESYES1K128K8/16wordsYESYESNo-300.11mA
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