Cypress Semiconductor Corp S26KS512SDPBHN020

Name: S26KS512SDPBHN020
Brand: Cypress Semiconductor Corp
SKU: 3230147-S26KS512SDPBHN020
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: S26KS512SDPBHN020

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3230147-S26KS512SDPBHN020

Description:: IC 512 MEG

ECAD Model:

Datasheet:: S26KS512SDPBHN020

Specifications

Cypress Semiconductor Corp S26KS512SDPBHN020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS512SDPBHN020.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
24-VBGA
Surface Mount
YES
Operating Temperature
-40°C~125°C TA
Packaging
Tray
Published
2016
Series
HyperFlash™ KS
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
24
HTS Code
8542.32.00.51
Technology
FLASH - NOR
Voltage - Supply
1.7V~1.95V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
1.8V
Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B24
Supply Voltage-Max (Vsup)
1.95V
Supply Voltage-Min (Vsup)
1.7V
Memory Size
512Mb 64M x 8
Memory Type
Non-Volatile
Operating Mode
SYNCHRONOUS
Clock Frequency
166MHz
Access Time
96ns
Memory Format
FLASH
Memory Interface
Parallel
Organization
64MX8
Memory Width
8
Memory Density
536870912 bit
Screening Level
AEC-Q100
Programming Voltage
1.8V
RoHS Status
ROHS3 Compliant

Description

S26KS512SDPBHN020 Overview
The part in question is manufactured by Cypress Semiconductor Corp. It falls under the category of Memory chips. It has a total of 24 terminations, and these terminations are positioned at the bottom of the chip. The part serves a single function. It requires a supply voltage of 1.8V to operate. The maximum reflow temperature for this part is not specified. The memory type of this chip is non-volatile, meaning it retains its data even when power is turned off. It has an access time of 96ns, indicating the speed at which data can be retrieved from the memory. The memory format of this chip is flash. It is organized in a 64MX8 configuration, meaning it has a total capacity of 64 megabits and each memory location has a width of 8 bits.

S26KS512SDPBHN020 Features
Package / Case: 24-VBGA

S26KS512SDPBHN020 Applications
There are a lot of Cypress Semiconductor Corp S26KS512SDPBHN020 Memory applications.

DVD disk buffer
personal computers
Cache memory
graphics card
networks
workstations,
data buffer
printers
cell phones
personal digital assistants

S26KS512SDPBHN020 More Descriptions

FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 166 MHz 96 ns 24-FBGA (6x8)
8542.32.00.51 Surface Mount Tray 64MX8 ic memory 166MHz 96ns 536870912bit 1.7V
HyperBus Memory, 512 Mbit Density, 96 ns Initial Access Time, 333 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
IC FLASH 512MBIT PARALLEL 24FBGA

Product Comparison

The three parts on the right have similar specifications to S26KS512SDPBHN020.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Published

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Operating Mode

Clock Frequency

Access Time

Memory Format

Memory Interface

Organization

Memory Width

Memory Density

Screening Level

Programming Voltage

RoHS Status

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Height Seated (Max)

Length

Width

ECCN Code

Pbfree Code

View Compare
S26KS512SDPBHN020

Cypress Semiconductor Corp

13 Weeks

Surface Mount

24-VBGA

YES

-40°C~125°C TA

Tray

2016

HyperFlash™ KS

Active

3 (168 Hours)

24

8542.32.00.51

FLASH - NOR

1.7V~1.95V

BOTTOM

NOT SPECIFIED

1

1.8V

NOT SPECIFIED

R-PBGA-B24

1.95V

1.7V

512Mb 64M x 8

Non-Volatile

SYNCHRONOUS

166MHz

96ns

FLASH

Parallel

64MX8

8

536870912 bit

AEC-Q100

1.8V

ROHS3 Compliant

-

-

-

-

-

-

-

-
S26KL128SDABHB020

Cypress Semiconductor Corp

13 Weeks

Surface Mount

24-VBGA

YES

-40°C~105°C TA

Tray

2017

Automotive, AEC-Q100, HyperFlash™ KL

Active

3 (168 Hours)

24

8542.32.00.51

FLASH - NOR

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

-

R-PBGA-B24

3.6V

2.7V

128Mb 16M x 8

Non-Volatile

SYNCHRONOUS

100MHz

96ns

FLASH

Parallel

16MX8

8

134217728 bit

-

3V

ROHS3 Compliant

1mm

NOT SPECIFIED

1mm

8mm

6mm

-

-

S26KS512SDPBHN020 vs S26KL128SDABHB020
S26KS128SDPBHI020

Cypress Semiconductor Corp

13 Weeks

Surface Mount

24-VBGA

YES

-40°C~85°C TA

Tray

2016

HyperFlash™ KS

Active

3 (168 Hours)

24

8542.32.00.51

FLASH - NOR

1.7V~1.95V

BOTTOM

NOT SPECIFIED

1

1.8V

NOT SPECIFIED

R-PBGA-B24

1.95V

1.7V

128Mb 16M x 8

Non-Volatile

SYNCHRONOUS

166MHz

96ns

FLASH

Parallel

16MX8

8

134217728 bit

AEC-Q100

1.8V

ROHS3 Compliant

-

-

-

-

-

3A991.B.1.A

-

S26KS512SDPBHN020 vs S26KS128SDPBHI020
S26KL512SDABHM030

Cypress Semiconductor Corp

13 Weeks

Surface Mount

24-VBGA

YES

-40°C~125°C TA

Tray

2016

Automotive, AEC-Q100, HyperFlash™ KL

Active

3 (168 Hours)

24

8542.32.00.51

FLASH - NOR

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

NOT SPECIFIED

R-PBGA-B24

3.6V

2.7V

512Mb 64M x 8

Non-Volatile

SYNCHRONOUS

100MHz

96ns

FLASH

Parallel

64MX8

8

536870912 bit

AEC-Q100; TS 16949

3V

ROHS3 Compliant

1mm

-

1mm

8mm

6mm

-

yes

S26KS512SDPBHN020 vs S26KL512SDABHM030