Cypress Semiconductor Corp S26KS512SDABHA030
- Part Number:
- S26KS512SDABHA030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235182-S26KS512SDABHA030
- Description:
- FLASH MEMORY NOR
- Datasheet:
- S26KS512SDABHA030
Cypress Semiconductor Corp S26KS512SDABHA030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS512SDABHA030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2017
- SeriesAutomotive, AEC-Q100, HyperFlash™ KS
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX8
- Memory Width8
- Memory Density536870912 bit
- Screening LevelAEC-Q100; TS 16949
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS512SDABHA030 Overview
This product features a 24-VBGA package, making it suitable for surface mount applications. It is packaged in trays and was first published in 2017. The memory type is non-volatile, ensuring data retention even when power is turned off. Operating in synchronous mode, this product offers efficient and synchronized data transfer. With an organization of 64MX8, it has a memory density of 536870912 bits. It has undergone rigorous screening and is compliant with AEC-Q100 and TS 16949 standards, ensuring its reliability and quality. The maximum seated height is 1mm, making it compact and suitable for various electronic devices.
S26KS512SDABHA030 Features
Package / Case: 24-VBGA
S26KS512SDABHA030 Applications
There are a lot of Cypress Semiconductor Corp S26KS512SDABHA030 Memory applications.
Cache memory
networks
telecommunications
nonvolatile BIOS memory
DVD disk buffer
cell phones
main computer memory
Camcorders
multimedia computers
personal digital assistants
This product features a 24-VBGA package, making it suitable for surface mount applications. It is packaged in trays and was first published in 2017. The memory type is non-volatile, ensuring data retention even when power is turned off. Operating in synchronous mode, this product offers efficient and synchronized data transfer. With an organization of 64MX8, it has a memory density of 536870912 bits. It has undergone rigorous screening and is compliant with AEC-Q100 and TS 16949 standards, ensuring its reliability and quality. The maximum seated height is 1mm, making it compact and suitable for various electronic devices.
S26KS512SDABHA030 Features
Package / Case: 24-VBGA
S26KS512SDABHA030 Applications
There are a lot of Cypress Semiconductor Corp S26KS512SDABHA030 Memory applications.
Cache memory
networks
telecommunications
nonvolatile BIOS memory
DVD disk buffer
cell phones
main computer memory
Camcorders
multimedia computers
personal digital assistants
S26KS512SDABHA030 More Descriptions
NOR Flash 512Mbit 64M X 8Bit 3V 24-Pin FBGA Tray
IC FLASH 512MBIT PARALLEL 24FBGA
Nor/Tray |Cypress Infineon Technologies S26KS512SDABHA030
S26KS512S - Parallel NOR HyperFl
IC FLASH 512MBIT PARALLEL 24FBGA
Nor/Tray |Cypress Infineon Technologies S26KS512SDABHA030
S26KS512S - Parallel NOR HyperFl
The three parts on the right have similar specifications to S26KS512SDABHA030.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusView Compare
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S26KS512SDABHA03013 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KSyesActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bitAEC-Q100; TS 169491.8V1mm8mm6mmROHS3 Compliant-
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13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray-Automotive, AEC-Q100, HyperFlash™ KS-Active3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V256Mb 32M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel32MX88268435456 bit-1.8V1mm8mm6mmROHS3 Compliant
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13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2017HyperFlash™ KS-Active3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit-1.8V1mm8mm6mmROHS3 Compliant
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13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLyesActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bitAEC-Q100; TS 169493V1mm8mm6mmROHS3 Compliant
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